Method of manufacturing electro-optical apparatus substrate, electro-optical apparatus substrate, electro-optical apparatus and electronic apparatus

A method of manufacturing an electro-optical apparatus substrate, comprising the processes of:

• forming a light shield layer above one surface of an optically transparent substrate;
• patterning said light shield layer to thereby form a patterned light shield layer at least in a formation region of each transistor element to be formed;
• forming a first insulation layer above said one surface of said optically transparent substrate above which said patterned light shield layer has been formed;
• forming a second insulation layer having a polishing rate lower than that of said first insulation layer, on said first insulation layer;
• forming a third insulation layer having a polishing rate higher than that of said second insulation layer, on said second insulation layer;
• polishing a surface of said third insulation layer;
• laminating a single crystal silicon layer above said polished surface of said third insulation layer;
• and
• forming said each transistor element by using said single crystal silicon layer.

A method of manufacturing an electro-optical apparatus substrate, comprising the processes of:

• forming a light shield layer above one surface of an optically transparent substrate;
• patterning a light shield layer to thereby form a patterned light shield layer at least in a formation region of each transistor element to be formed;
• forming an insulation layer on said one surface of said optically transparent substrate on which said patterned light shield layer has been formed;
• polishing a surface of said insulation layer until a surface of said patterned light shield layer is exposed;
• laminating single crystal silicon layer above said polished surface of said insulation layer and said exposed surface of said patterned light shield layer;
• and
• forming said each transistor element by using said single crystal silicon layer.

A method of manufacturing an electro-optical apparatus substrate, comprising the processes of:

• forming a light shield above one surface of an optically transparent substrate;
• patterning said light shield layer to thereby form a patterned light shield layer at least in a formation region of each transistor element to be formed;
• forming a first insulation layer on said one surface of said optically transparent substrate on which said patterned light shield layer has been formed;
• polishing a surface of said first insulation layer until a surface of said patterned light shield layer is exposed;
• forming a second insulation layer above said polished surface of said first insulation layer;
• laminating a single crystal silicon layer above said second insulation layer;
• and
• forming said each transistor element by using said single crystal silicon layer.

An electro-optical apparatus comprising:

• (A) an electro-optical apparatus substrate comprising a patterned light shield layer having a pattern, an insulation film and a transistor, which are sequentially formed above one surface of an optically transparent substrate,
• said insulation film comprising (i) a first insulation layer and (ii) a second insulation layer, which is partially formed on said first insulation layer and whose polishing rate is lower than that of said first insulation layer, so that a surface of said insulation film is smoothed,
• said transistor element having a semiconductor layer comprising a single crystal silicon layer;
• (B) another optically transparent substrate disposed to be opposed to said one surface of said optically transparent substrate of said electro-optical apparatus substrate;
• and
• (C) an electro-optical material layer sandwiched between said two optically transparent substrates.

An electro-optical apparatus comprising:

• (A) an electro-optical apparatus substrate comprising a patterned light shield layer having a pattern, an insulation film and a transistor, which are sequentially formed above one surface of an optically transparent substrate,
• said insulation film comprising (i) a first insulation layer, (ii) a second insulation layer, which is formed on said first insulation layer and whose polishing rate is lower than that of said first insulation layer, and (iii) a third insulation layer, which is partially formed on said second insulation layer and whose polishing rate is higher than that of said second insulation layer, so that a surface of said insulation film is smoothed,
• said transistor element having a semiconductor layer comprising a single crystal silicon layer;
• (B) another optically transparent substrate disposed to be opposed to said one surface of said optically transparent substrate of said electro-optical apparatus substrate;
• and
• (C) an electro-optical material layer sandwiched between said two optically transparent substrates.

An electro-optical apparatus comprising:

• (A) an electro-optical apparatus substrate comprising:
• a patterned light shield layer having a surface and a pattern above one surface of an optically transparent substrate;
• an insulation layer which is formed above said one surface of said optically transparent substrate at an area where said patterned light shield layer is not formed, whose surface is smoothed side by side with said surface of said patterned light shield layer;
• a transistor element, which is formed above said patterned light shield layer and has a semiconductor layer comprising a single crystal silicon layer;
• (B) another optically transparent substrate disposed to be opposed to said one surface of said optically transparent substrate of said electro-optical apparatus substrate;
• and
• (C) an electro-optical material layer sandwiched between said two optically transparent substrates.

An electronic apparatus comprising:

• (A) an electro-optical apparatus substrate comprising a patterned light shield layer having a pattern, an insulation film and a transistor, which are sequentially formed above one surface of an optically transparent substrate,
• said insulation film comprising (i) a first insulation layer and (ii) a second insulation layer, which is partially formed on said first insulation layer and whose polishing rate is lower than that of said first insulation layer, so that a surface of said insulation film is smoothed,
• said transistor element having a semiconductor layer comprising a single crystal silicon layer;
• (B) another optically transparent substrate disposed to be opposed to said one surface of said optically transparent substrate of said electro-optical apparatus substrate;
• and
• (C) an electro-optical material layer sandwiched between said two optically transparent substrates.

An electronic apparatus comprising:

• (A) an electro-optical apparatus substrate comprising a patterned light shield layer having a pattern, an insulation film and a transistor, which are sequentially formed above one surface of an optically transparent substrate,
• said insulation film comprising (i) a first insulation layer, (ii) a second insulation layer, which is formed on said first insulation layer and whose polishing rate is lower than that of said~first insulation layer, and (iii) a third insulation layer, which is partially formed on said second insulation layer and whose polishing rate is higher than that of said second insulation layer, so that a surface of said insulation film is smoothed,
• said transistor element having a semiconductor layer comprising a single crystal silicon layer;
• (B) another optically transparent substrate disposed to be opposed to said one surface of said optically transparent substrate of said electro-optical apparatus substrate;
• and
• (C) an electro-optical material layer sandwiched between said two optically transparent substrates.

An electronic apparatus comprising:

• (A) an electro-optical apparatus substrate comprising:
• a patterned light shield layer having a surface and a pattern on one surface of an optically transparent substrate;
• an insulation layer which is formed above said one surface of said optically transparent substrate at an area where said patterned light shield layer is not formed, whose surface is smoothed side by side with said surface of said patterned light shield layer;
• a transistor element, which is formed above said patterned light shield layer and has a semiconductor layer comprising a single crystal silicon layer;
• (B) another optically transparent substrate disposed to be opposed to said one surface of said optically transparent substrate of said electro-optical apparatus substrate;
• and
• (C) an electro-optical material layer sandwiched between said two optically transparent substrates.

A method of manufacturing an electro-optical apparatus substrate, comprising the processes of:

• forming a light shield layer above one surface of an optically transparent substrate;
• patterning said light shield layer to thereby form a patterned light shield layer at least in a formation region of each transistor element to be formed;
• forming a first insulation layer above said one surface of said optically transparent substrate above which said patterned light shield layer has been formed;
• forming a second insulation layer having a polishing rate lower than that of said first insulation layer, on said first insulation layer;
• polishing a surface of said second insulation layer;
• forming a silicon layer above said polished surface of said second insulation layer;
• and
• forming said each transistor element by using said silicon layer.

A method of manufacturing an electro-optical apparatus substrate, comprising the processes of:

• forming a light shield layer above one surface of an optically transparent substrate;
• patterning said light shield layer to thereby form a patterned light shield layer at least in a formation region of each transistor element to be formed;
• forming a first insulation layer above said one surface of said optically transparent substrate above which said patterned light shield layer has been formed;
• forming a second insulation layer having a polishing rate lower than that of said first insulation layer, on said first insulation layer;
• forming a third insulation layer having a polishing rate higher than that of said second insulation layer, on said second insulation layer;
• polishing a surface of said third insulation layer;
• forming a silicon layer above said polished surface of said third insulation layer;
• and
• forming said each transistor element by using said silicon layer.

A method of manufacturing an electro-optical apparatus substrate, comprising the processes of:

• forming a light shield layer above one surface of an optically transparent substrate;
• patterning said light shield layer to thereby form a patterned light shield layer at least in a formation region of each transistor element to be formed;
• forming an insulation layer on said one surface of said optically transparent substrate on which said patterned light shield layer has been formed;
• polishing a surface of said insulation layer until a surface of said patterned light shield layer is exposed;
• forming a silicon layer above said polished surface of said insulation layer and said exposed surface of said patterned light shield layer;
• and
• forming said each transistor element by using said silicon layer.

A method of manufacturing an electro-optical apparatus substrate, comprising the processes of:

• forming a light shield layer above one surface of an optically transparent substrate;
• patterning said light shield layer to thereby form a patterned light shield layer at least in a formation region of each transistor element to be formed;
• forming a first insulation layer on said one surface of said optically transparent substrate on which said patterned light shield layer has been formed;
• polishing a surface of said first insulation layer until a surface of said patterned light shield layer is exposed;
• forming a second insulation layer above said polished surface of said first insulation layer;
• forming a silicon layer above said second insulation layer;
• and
• forming said each transistor element by using said silicon layer.

A method of manufacturing an electro-optical apparatus substrate, comprising the processes of:

• forming a light shield layer above one surface of an optically transparent substrate;
• patterning said light shield layer to thereby form a patterned light shield layer;
• forming a first insulation layer above said one surface of said optically transparent substrate above which said patterned light shield layer has been formed;
• forming a second insulation layer having a polishing rate lower than that of said first insulation layer, on said first insulation layer;
• forming a third insulation layer having a polishing rate higher than that of said second insulation layer, on said second insulation layer;
• and
• polishing a surface of said third insulation layer.