Integrated circuit including field effect transistor and method of manufacture

A field effect transistor including:

• a first substrate;
• a second substrate laminated to the first substrate;
• a gate electrode;
• a source electrode located between the first and second substrates;
• a drain electrode located between the first and second substrates;
• and an organic semiconductor located between the first and second substrates proximate the gate electrode, and in electrical contact with the source electrode and the drain electrode;
• a contact enhancing material disposed between the source electrode and the organic semiconductor and between the drain electrode and the organic semiconductor;
• wherein the contact enhancing material is selected from the group consisting of;
• chromium, non-ferrous alloys of chromium, zinc, alloys of zinc, titanium, alloys of titanium, tin, and tin alloys.

A field effect transistor including:

• a first substrate;
• a second substrate laminated to the first substrate;
• a gate electrode;
• a source electrode located between the first and second substrates;
• a drain electrode located between the first and second substrates;
• and an organic semiconductor located between the first and second substrates proximate the gate electrode, and in electrical contact with the source electrode and the drain electrode
• a contact enhancing material disposed between the source electrode and the organic semiconductor and between the drain electrode and the organic semiconductor;
• wherein;
• the organic semiconductor comprises a polythiophene family compound;
• and
• the contact enhancing layer comprises octadecyltrichlorosilane.

A method of manufacturing an integrated circuit that includes an electrode device, the method comprising the steps of:

• applying an organic semiconductor to a first substrate;
• and
• thereafter, laminating a second substrate to the first substrate over the organic semiconductor prior to performing the step of laminating, forming a first electrode on the second substrate on a side of the second substrate char is to face the first substrate, in a position that is to be in at least partially overlapping relation with the organic semiconductor;
• whereby, upon performing the step of lamination, an electrical contact is established between the organic semiconductor and the first electrode.