Ion implantation system having an energy probe
AssigneeIbis Technology Corporation
InventorSteven Richards
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Abstract
The present invention provides improved ion implantation systems and methods in which a high voltage probe is utilized in an ion implantation system to directly measure energy of an ion beam incident on a substrate. More particularly, an exemplary ion implantation system can include an ion source maintained at a high electric potential that generates ions, and a plurality of extraction electrodes that can accelerate the ions to a desired energy. The system further includes an end-station, maintained at ground electric potential, in which a wafer holding for positioning a wafer in the path of an ion beam is disposed. The ion implantation system is further characterized by a high energy probe disposed between a high voltage terminus of the ion source and ground for directly measuring the energy of the ions.
Claims11
In an ion implantation system having an ion source maintained at a high electric potential, a grounded end station adapted for holding wafers and a plurality of extraction electrodes accelerating the ions from the source and directing an ion beam onto the wafers of the end station, the improvement comprising
- a high voltage probe disposed between a high voltage terminus of the ion source and ground.
In a method of implanting wafers positioned a grounded end station of an ion implantation chamber with ions generated by an ion source maintained at a high electric potential, and accelerated by a plurality of extraction electrodes to a selected energy range to be directed as an ion beam to the wafers, the improvement comprising:
- disposing a high voltage probe between a high voltage terminus of the ion source and ground to directly measure ion energy in said end station prior to ion impact with the wafers.
In an ion implantation system having an ion source maintained at a high electric potential, a grounded end station adapted for holding wafers, an extraction stage for extracting ions from the source, and a deceleration stage for decelerating the extracted ions to a selected energy to be directed onto the wafers of the end station, the improvement comprising
- a high voltage probe disposed between a high voltage terminus of the ion source and ground.
Dependencies are inferred from the claim text.