Trialkyl Group VA metal compounds
AssigneeShipley Company, L.L.C.
InventorsDeodatta V. Shenai-Khatkhate, Michael B. Power, Artashes Amamchyan
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Abstract
Disclosed are methods of preparing trialkyl Group VA metal compounds in high yield and high purity. Such trialkyl Group VA metal compounds are substantially free of oxygenated impurities, ethereal solvents and metallic impurities.
Claims18
A method for preparing trialkyl Group VA metal compounds comprising the step of reacting a Group VA metal trihalide with a Group IIIA compound of the formula RnM1X3−n in the presence of a tertiary amine in an organic solvent that is free of oxygen substitution, wherein each R is independently selected from (C1-C6)alkyl;
- M1 is a Group IIIA metal;
- X is halogen and n is an integer from 1-3.
A method for depositing a film of a Group VA metal on a substrate comprising the steps of:
- a) conveying a Group VA metal compound in the gaseous phase to a deposition chamber containing the substrate;
- b) decomposing the Group VA metal compound in the deposition chamber;
- and c) depositing a film of the Group VA metal on the substrate;
- wherein the Group VA metal compound contains <0.5 ppm of ethereal solvents;
- and wherein the Group VA metal compound is a trialkylantimony compound or a trialkylbismuth compound.
A method for depositing a film of a Group VA metal on a substrate comprising the steps of:
- a) conveying a Group VA metal compound in the gaseous phase to a deposition chamber containing the substrate;
- b) decomposing the Group VA metal compound in the deposition chamber;
- and c) depositing a film of the Group VA metal on the substrate;
- wherein the Group VA metal compound contains <0.5 ppm of ethereal solvents;
- and wherein the Group VA metal compound is prepared by the method comprising the step of reacting a Group VA metal trihalide with a Group IIIA compound of the formula RnM1X3−n in the presence of a tertiary amine in an organic solvent that is free of oxygen substitution, wherein each R is independently selected from (C1-C6)alkyl;
- M1 is a Group IIIA metal;
- X is halogen and n is an integer from 1-3.
A method for manufacturing an electronic device comprising the step of depositing a film of a Group VA metal on an electronic device substrate comprising the steps of:
- a) conveying a Group VA metal compound in the gaseous phase to a deposition chamber containing the substrate;
- b) decomposing the Group VA metal compound in the deposition chamber;
- and c) depositing a film of the Group VA metal on the substrate;
- wherein the Group VA metal compound contains <0.5 ppm of ethereal solvents;
- and
- wherein the Group VA metal compound is a trialkylantimony compound or a trialkylbismuth compound.
A method for manufacturing an electronic device comprising the step of depositing a film of a Group VA metal on an electronic device substrate comprising the steps of:
- a) conveying a Group VA metal compound in the gaseous phase to a deposition chamber containing the substrate;
- b) decomposing the Group VA metal compound in the deposition chamber;
- and c) depositing a film of the Group VA metal on the substrate;
- wherein the Group VA metal compound contains <0.5 ppm of ethereal solvents;
- and
- wherein the Group VA metal compound is prepared by the method comprising the step of reacting a Group VA metal trihalide with a Group IIIA compound of the formula RnM1X3−n in the presence of a tertiary amine in an organic solvent that is free of oxygen substitution, wherein each R is independently selected from (C1-C6)alkyl;
- M1 is a Group IIIA metal;
- X is halogen and n is an integer from 1-3.
Dependencies are inferred from the claim text.