Formulations including a 1,3-dicarbonyl compound chelating agent and copper corrosion inhibiting agents for stripping residues from semiconductor substrates containing copper structures
AssigneeAdvanced Technologies Materials, Inc.
InventorsWilliam A. Wojtczak, Ma. Fatima Seijo, David Bernhard, Long Nguyen
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Abstract
A semiconductor wafer cleaning formulation, including 2-98% wt. organic amine, 0-50% wt. water, 0.1-60% wt. 1,3-dicarbonyl compound chelating agent, 0-25% wt. of additional different chelating agent(s), 0.5-40% wt. nitrogen-containing carboxylic acid or an imine, and 2-98% wt polar organic solvent. The formulations are useful to remove residue from wafers following a resist plasma ashing step, such as inorganic residue from semiconductor wafers containing delicate copper interconnecting structures.
Claims14
A method for fabricating a semiconductor wafer including the steps comprising:
- plasma etching a metalized layer from a surface of the wafer;
- plasma ashing a resist from the surface of the wafer;
- cleaning the wafer with a semiconductor wafer cleaning formulation comprising the following components in the percentage by weight (based on the total weight of the formulation) ranges shown:
- organic amine(s) 2-98% water 0-50% 1,3-dicarbonyl compound chelating agent 0.1-60% additional different chelating agent(s) 0-25% nitrogen-containing carboxylic acid or imine 0.5-40% polar organic solvent 2-98% TOTAL 100%.
A method of removing residue from a wafer following a resist plasma ashing step on said wafer, comprising contacting the wafer with a cleaning formulation, including (i) organic amine(s), (ii) water, (iii) 1,3-dicarbonyl compound chelating agent, (iv) nitrogen-containing carboxylic acid or imine, (v) polar organic solvent, and optionally (vi) additional different chelating agent(s).
Dependencies are inferred from the claim text.