Integrated processing system for forming an insulating layer of thin film transistor liquid crystal display

A method of forming an insulating film on a substrate by means of a processing station that comprises a cassette station, a chemical vapor deposition (CVD) unit placed in a position facing the cassette station, a transfer system between the CVD unit and the cassette station, and a cleaning unit proximate to the transfer system, the method comprising:

• providing a substrate in the cassette station;
• and performing an operating cycle to form a desired thickness of insulating film on the substrate, the operating cycle including:
• performing a plurality of deposition passes alternated with at least a cleaning operation until the desired thickness of insulating film is achieved on the substrate, wherein each deposition pass is performed by means of the CVD unit to form an intermediate thickness of insulating layer over the substrate that is smaller than the desired thickness of the insulating film, each cleaning operation is performed by means of the cleaning unit to remove residual particles from an intermediary insulating layer, and the conveyance of the substrate being processed between the cassette station, the CVD unit and the cleaning unit is achieved by means of the transfer system.