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US 6,660,664 B1Granted
Structure and method for formation of a blocked silicide resistor
AssigneeInternational Business Machines Corporation
InventorsJames W. Adkisson, Arne W. Ballantine, Matthew D. Gallagher, Peter J. Geiss, Jeffrey D. Gilbert, Shwu-Jen Jeng, Donna K. Johnson, Robb A. Johnson, Glen L. Miles, Kirk D. Peterson, James J. Toomey, Tina Wagner
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Abstract
A process of forming a nitride film on a semiconductor substrate including exposing a surface of the substrate to a rapid thermal process to form the nitride film.
Claims22
A process of forming a silicide resistor, comprising:
- providing a doped silicon region;
- forming a silicon nitride film disposed between metal silicide structures, and the silicon nitride film and metal silicide structures are disposed on the doped silicon region, wherein the silicon nitride film is formed by a rapid thermal chemical vapor deposition process at a temperature from about 600° C. to about 775° C., and has a conformality of greater than about 90%;
- and
- forming contacts to the metal silicide structures.
1 more element
Dependencies are inferred from the claim text.