Computer readable medium for holding a program for performing plasma-assisted CVD of low dielectric constant films formed from organosilane compounds

A computer readable medium containing a program which, when executed by a processor performs steps, comprising:

• depositing a conformal lining layer on a patterned metal layer on a substrate from process gases composing two or more compounds and an oxidizing gas while applying RF power, wherein the two or more compounds comprise one or more silicon atoms, at least one allyl group bonded to each silicon atom, and at least one hydrogen atom bonded to each silicon atom, and wherein the conformal lining layer retains sufficient silicon-carbon bonds to have a carbon content from about 1% to about 50% by atomic weight and a dielectric constant of about 3 or less;
• and
• depositing a gap filling layer on the conformal lining layer.

A computer readable medium containing a program which, when executed by a processor performs a step, comprising:

• reacting two or more organosilane compounds comprising at least one hydrogen and at least one alkyl group bonded to silicon with an oxidizing gas at plasma conditions sufficient to deposit a low dielectric constant film on a semiconductor substrate, wherein the low dielectric constant film has a carbon content from 1% to 50% by atomic weight and a dielectric constant of about 3 or less.

A computer readable medium containing a program which, when executed by a processor performs a step, comprising:

• reacting two or more organosilane compounds consisting essentially of both CH3—Si bonds and Si—H bonds with an oxidizing gas at plasma conditions sufficient to deposit a loss dielectric constant film on the semiconductor substrate, wherein the low dielectric constant film has a carbon content from 1% to 50% by atomic weight and a dielectric constant of about 3 or less.

A computer readable medium containing a program which, when executed by a processor performs a step, comprising:

• reacting two or more organosilane compounds consisting of carbon, silicon, and hydrogen with an oxidizing gas at plasma conditions sufficient to deposit a low dielectric constant film on a semiconductor substrate, wherein each organosilane compound has at least one silicon-hydrogen bond and at least one alkyl group bonded to silicon, and wherein the low dielectric constant film has a carbon content from 1% to 50% by atomic weight and a dielectric constant of about 3 or less.