Adjustable wafer stage, and a method and system for performing process operations using same

A process tool, comprising:

• a process chamber;
• a wafer stage in said process chamber to receive a wafer positioned thereabove, said wafer stage having a surface that is adapted to be raised, lowered or tilted;
• and
• at least three rack and pinion combinations operatively coupled to said wafer stage that, when actuated, may be used in raising, lowering or tilting said surface of said wafer stage.

A method, comprising:

• providing a process chamber comprised of a wafer stage, said wafer stage having a surface that is adjustable;
• adjusting said surface of said wafer stage by performing at least one of raising, lowering and varying a tilt of said surface of said wafer stage;
• positioning a wafer on said wafer stage after said wafer stage has been adjusted;
• and
• performing a process operation on said wafer positioned on said wafer stage.

A method, comprising:

• providing a process chamber comprised of a wafer stage, said wafer stage having a surface that is adjustable;
• adjusting said surface of said wafer stage by actuating at least one of a plurality of pneumatic cylinders that are operatively coupled to said wafer stage to accomplish at least one of raising, lowering and varying a tilt of said surface of said wafer stage;
• positioning a wafer on said wafer stage;
• and
• performing a process operation on said wafer positioned on said wafer stage.

A method, comprising:

• providing a process chamber comprised of a wafer stage, said wafer stage having a surface that is adjustable;
• adjusting said surface of said wafer stage by actuating at least one of a plurality of rack and pinion combinations that are operatively coupled to said wafer stage to accomplish at least one of raising, lowering and varying a tilt of said surface of said wafer stage;
• positioning a wafer on said wafer stage;
• and
• performing a process operation on said wafer positioned on said wafer stage.

A method, comprising:

• performing a process operation in a process tool on each of a plurality of wafers;
• measuring a plurality of said processed wafers to determine across-wafer variations produced by said process operation performed in said process tool;
• adjusting, based upon said measured across-wafer variations, a plane of a surface of an adjustable wafer stage;
• and
• performing said process operation on at least one subsequently processed wafer positioned on said wafer stage in said process chamber after said plane of said wafer stage has been adjusted.

A method, comprising:

• performing a deposition process in a deposition tool on each of a plurality of wafers to form a process layer above each of said wafers;
• measuring a plurality of said process layers formed above a plurality of said wafers to determine across-wafer thickness variations produced by said deposition process;
• adjusting, based upon said measured across-wafer thickness variations, a plane of a surface of an adjustable wafer stage;
• and
• performing said deposition process on at least one subsequently processed wafer positioned on said wafer stage in said deposition tool after said plane of said wafer stage has been adjusted.

A method, comprising:

• performing an etching process in an etching tool on a process layer formed above each of a plurality of wafers;
• measuring a plurality of etched process layers on a plurality of said wafers to determine across-wafer variations in a feature size produced by said etching operation;
• adjusting, based upon said measured across-wafer feature size variations, a plane of a surface of an adjustable wafer stage;
• and
• performing said etching process on at least one subsequently processed wafer positioned on said wafer stage in said etching tool after said plane of said wafer stage has been adjusted.

A system, comprising:

• a metrology tool for measuring a plurality of wafers processed in a process tool to determine across-wafer variations produced by said process tool;
• a process tool comprised of an adjustable wafer stage that has a surface adapted to receive a wafer to be processed in said tool;
• and
• a controller for adjusting a plane of said surface of said wafer stage based upon said determined across-wafer variations produced by said tool, whereby said process tool processes at least one subsequently processed wafer positioned on said wafer stage after said plane of said surface of said wafer stage has been adjusted.

A system, comprising:

• means for measuring a plurality of wafers processed in a process tool to determine across-wafer variations produced by said process tool;
• process means for performing a process operation, said process means comprised of an adjustable wafer stage that has a surface adapted to receive a wafer to be processed in said tool;
• and
• a controller means for adjusting a plane of said surface of said wafer stage based upon said determined across-wafer variations produced by said process means, whereby said process means processes at least one subsequently processed wafer positioned on said wafer stage after said plane of said surface of said wafer stage has been adjusted.

A method, comprising:

• providing a process chamber comprised of a wafer stage, said wafer stage having a surface that is adjustable and located in a first plane;
• adjusting said surface of said wafer stage by raising said surface of said wafer stage to a position wherein said surface of said wafer stage is positioned in a second plane that is offset from and approximately parallel to said first plane;
• positioning a wafer on said wafer stage;
• and
• performing a process operation on said wafer positioned on said wafer stage.

A method, comprising:

• providing a process chamber comprised of a wafer stage, said wafer stage having a surface that is adjustable and located in a first plane;
• adjusting said surface of said wafer stage by lowering said surface of said wafer stage to a position wherein said surface of said wafer stage is positioned in a second plane that is offset from and approximately parallel to said first plane;
• positioning a wafer on said wafer stage;
• and
• performing a process operation on said wafer positioned on said wafer stage.

A method, comprising:

• providing a process chamber comprised of a wafer stage, said wafer stage having a surface that is adjustable and located in a first plane;
• adjusting said surface of said wafer stage by tilting said surface of said wafer stage such that said surface of said wafer stage is positioned in a second plane, said second plane being tilted relative to said first plane by an angle that does not exceed a value ranging from 0-25 degrees;
• positioning a wafer on said wafer stage;
• and
• performing a process operation on said wafer positioned on said wafer stage.