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AssigneeHitachi, Ltd.
InventorsTetsuo Ono, Takafumi Tokunaga, Tadashi Umezawa, Motohiko Yoshigai, Tatsumi Mizutani, Tokuo Kure, Masayuki Kojima, Takashi Sato, Yasushi Goto
Estimating the term…
A surface processing method of a sample having a mask layer that does not contain carbon as a major component formed on a substance to be processed, the substance being a metal, semiconductor and insulator deposited on a silicon substrate, includes the steps of installing the sample on a sample board in a vacuum container, generating a plasma that consists of a mixture of halogen gas and adhesive gas inside the vacuum container, applying a radio frequency bias voltage having a frequency ranging from 200 kHz to 20 MHz on the sample board, and controlling a periodic on-off of the radio frequency bias voltage with an on-off control frequency ranging from 100 Hz to 10 kHz.
A surface processing method of a sample having a mask layer without containing carbon as a major component formed on a substance to be processed, wherein said substance is at least one of a metal, semiconductor or insulator deposited on a silicon substrate, the method comprising steps of:
A surface processing method of a sample having a metal to be processed and a mask layer that does not contain carbon as a major component formed on said metal;
Dependencies are inferred from the claim text.