Pre-LDD wet clean recipe to gain channel length scaling margin beyond sub-0.1 μm
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsJyh-Chyurn Guo, Wu-Der Wang
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Abstract
A method of cleaning a substrate before and after an LDD implantation comprising the following sequential steps. A substrate having a gate structure formed thereover is provided. The substrate is cleaned by a wet clean process including NH4OH. An LDD implantation is performed into the substrate to form LDD implants. The substrate is cleaned by a wet clean process excluding NH4OH.
Claims49
A method of cleaning a substrate before and after an LDD implantation, comprising the sequential steps of:
- providing a substrate having a gate structure formed thereover;
- cleaning the substrate by a wet clean process including NH4OH;
- performing an LDD implantation into the substrate to form LDD implants;
- not contacting the LDD implanted substrate with NH4OH;
- and
- then cleaning the substrate by only a wet clean process excluding NH4OH.
A method of cleaning a silicon substrate before and after an LDD implantation, comprising the sequential steps of:
- providing a silicon substrate having a gate structure formed thereover;
- cleaning the silicon substrate by a wet clean process including NH4OH;
- performing an LDD implantation into the silicon substrate to form LDD implants;
- not contacting the LDD implanted silicon substrate with NH4OH;
- and
- then cleaning the silicon substrate by only a wet clean process excluding NH4OH.
A method of cleaning a silicon substrate before and after an LDD implantation, comprising the sequential steps of:
- providing a silicon substrate having a gate structure formed thereover;
- cleaning the silicon substrate by a wet clean process including NH4OH;
- the wet clean process including NH4OH forms micro-recesses in the silicon substrate;
- performing an LDD implantation into the silicon substrate to form LDD implants;
- not contacting the LDD implanted silicon substrate with NH4OH;
- and
- then cleaning the silicon substrate by only a wet clean process excluding NH4OH.
A method of cleaning a silicon substrate before and after an LDD implantation, comprising the sequential steps of:
- providing a silicon substrate having a gate structure formed thereover;
- cleaning the silicon substrate by a wet clean process including NH4OH;
- the wet clean process including NH4OH forms micro-recesses in the silicon substrate;
- the wet clean process including NH4OH being conducted at the following parameters:
- NH4OH:
- from about 10 to 30% by volume;
- H2O2:
- from about 10 to 40% by volume;
- H2O:
- from about 90 to 100% by volume;
- temperature:
- from about 25 to 80° C.;
- and
- time:
- from about 30 to 500 seconds
- performing an LDD implantation into the silicon substrate to form LDD implants;
- not contacting the LDD implanted silicon substrate with NH4OH;
- and
- then cleaning the silicon substrate by only a wet clean process excluding NH4OH.
Dependencies are inferred from the claim text.