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US 6,660,631 B1Granted
Devices containing platinum-iridium films and methods of preparing such films and devices
AssigneeMicron Technology, Inc.
InventorEugene P. Marsh
Life of this patent
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Abstract
Methods for forming platinum-iridium films, particularly in the manufacture of a semiconductor device, and devices (e.g., capacitors, integrated circuit devices, and memory cells) containing such films.
Claims19
A method of manufacturing a semiconductor structure, the method comprising:
- providing a semiconductor substrate or substrate assembly;
- providing a precursor composition comprising one or more complexes of the formula:
- LyIryz,
- wherein:
- each L group is independently a neutral or anionic ligand;
- each Y group is independently a pi bonding ligand selected from the group of CO, NO, CN, CS, N2, PX3, PR3, P(OR)3, AsX3, AsR3, As(OR)3, SbX3, SbR3, Sb(OR)3, NHxR3−x, and RCN, wherein R is an organic group, X is a halide, and x=0 to 3,
- y=1 to 4;
- and
- z=1 to 4;
- providing a precursor composition comprising one or more platinum complexes;
- and
- forming a platinum-iridium-containing film from the precursor compositions on a surface of the semiconductor substrate or substrate assembly, wherein the platinum-iridium-containing film has the formula platinum(w):iridium(1−w), wherein w is in the range of about 0.99 to about 0.01.
9 more elements
A method of forming a film on a substrate, the method comprising:
- providing a substrate;
- providing a precursor composition comprising one or more complexes of the formula:
- LyIrYz,
- wherein:
- each L group is independently a neutral or anionic ligand;
- each Y group is independently a pi bonding ligand selected from the group of CO, NO, CN, CS, N2, PX3, PR3, P(OR)3, AsX3, AsR3, As(OR)3, SbX3, SbR3, Sb(OR)3, NHxR3−x, CNR, and RCN, wherein R is an organic group, X is a halide, and x=0 to 3;
- y=1 to 4;
- and
- z−1 to 4;
- providing a precursor composition comprising one or more platinum complexes;
- and
- forming a platinum-iridium-containing film from the precursor compositions on a surface of the substrate, wherein the platinum-iridium-containing film has the formula platinum(w):iridium(1−w), wherein w is in the range of about 0.99 to about 0.01.
9 more elements
Dependencies are inferred from the claim text.