Method of MOCVD Ti-based barrier metal thin films with tetrakis (methylethylamino) titanium with octane
AssigneeSharp Laboratories of America, Inc.
InventorsWei Pan, Wei-Wei Zhuang, David R. Evans, Sheng Teng Hsu
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Abstract
A method of forming a titanium-based barrier metal layer includes preparing a substrate, including forming IC elements on the substrate; forming a titanium-based barrier metal precursor using a solution of about 5% by volume tetrakis (methylethylamino) titanium (TMEAT) and about 95% by volume octane; and depositing a titanium-based barrier layer on the substrate by MOCVD.
Claims12
A method of forming a titanium-based barrier metal layer comprising:
- preparing a substrate, including forming IC elements on the substrate;
- forming a titanium-based barrier metal precursor using a solution of about 5% by volume tetrakis (methylethylamino) titanium (TMEAT) and about 95% by volume octane;
- and
- depositing a titanium-based barrier layer on the substrate by MOCVD.
A method of forming a titanium-based barrier metal layer comprising:
- preparing a substrate, including forming IC elements on the substrate;
- forming a titanium-based barrier metal precursor using a solution of about 5% by volume tetrakis (methylethylamino) titanium (TMEAT) and about 95% by volume octane, including, in a nitrogen-filled glove box, mixing about 475 cc of octane (C8H18) and about 25 cc of TMEAT;
- and
- depositing a titanium-based barrier layer on the substrate by MOCVD.
A method of forming a titanium-based barrier metal layer comprising:
- preparing a substrate, including forming IC elements on the substrate;
- forming a titanium-based barrier metal precursor using a solution of about 5% by volume tetrakis (methylethylamino) titanium (TMEAT) and about 95% by volume octane, including, in a nitrogen-filled glove box, mixing about 475 cc of octane (C8H,18) and about 25 cc of TMEAT;
- depositing a titanium-based barrier layer on the substrate by MOCVD;
- and
- introducing SiH4 gas into the chamber for a period of time in a range from between about 30 seconds to 120 seconds, to form a surface-silicon layer rich in TiN.
Dependencies are inferred from the claim text.