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AssigneeApplied Materials, Inc.
InventorsLing Chen, Seshadri Ganguli, Wei Cao, Christophe Marcadal
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A method of forming barrier layers in a via hole extending through an inter-level dielectric layer and including a preformed first barrier coated onto the bottom and sidewalls of the via holes. In a single plasma sputter reactor, a first step sputters the wafer rather than the target with high energy ions to remove the barrier layer from the bottom of the via but not from the sidewalls and a second step sputter deposits a second barrier layer, for example of Ta/TaN, onto the via bottom and sidewalls. The two steps may be differentiated by power applied to the target, by chamber pressure, or by wafer bias. The second step may include the simultaneous removal of the first barrier layer from the via bottom and sputter deposition of the second barrier layer onto the via sidewalls.
A process performed in a plasma sputter chamber having a metal target for forming a barrier in a hole formed in a dielectric layer formed over a substrate, wherein a first barrier layer is coated on a bottom and on sidewalls of said hole, said process comprising the steps of:
A process performed in a diode plasma sputter reactor having a metal target and a pedestal electrode for supporting a substrate for forming a barrier in a hole formed in a dielectric layer formed over said substrate, wherein a first barrier layer is coated on a bottom and on sidewalls of said hole, said process comprising sequentially performed first and second steps, wherein a DC self-bias applied to said pedestal electrode is greater in said first step than in said second step.
A process performed in a diode plasma sputter reactor having a metal target and a pedestal electrode for supporting a substrate for forming a barrier in a hole formed in a dielectric layer formed over said substrate, said process comprising the steps of:
A process performed in a diode plasma sputter reactor having a metal target for forming a barrier in a hole formed in a dielectric layer formed over a substrate, wherein a first barrier layer is coated on a bottom and on sidewalls of said hole, said process comprising the steps of:
A process performed upon a substrate disposed on a pedestal electrode located in an interior of a plasma sputter chamber having a metal target for depositing a metal of said target in a hole formed in a dielectric layer formed over said substrate, said process comprising the steps of:
A process performed in a plasma sputter reactor having a metal target for forming a barrier in a hole formed in a dielectric layer formed over a substrate, wherein a first barrier layer is coated on a bottom and on sidewalls of said hole, said process comprising the steps of:
Dependencies are inferred from the claim text.