Method of forming noble metal pattern
AssigneeMicron Technology, Inc.
InventorRichard H. Lane
Life of this patent
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Abstract
A process for high resolution patterning of noble metals, such as platinum, for forming various semiconductor devices, such as capacitors or wiring patterns, is disclosed. A layer of noble metal, which will form an upper electrode of a capacitor, is formed over a dielectric layer. A mask layer is then formed over the noble metal layer and patterned to leave a portion of the noble metal layer exposed. The portion of the exposed noble metal is subsequently converted to its silicide, the noble metal silicide is then etched and the dielectric layer is removed, leaving the noble metal layer patterned in an upper electrode of an IC capacitor.
Claims14
A method of forming an upper capacitor electrode, comprising the acts of:
- forming a dielectric layer over a lower capacitor electrode provided over a semiconductor substrate;
- forming a platinum layer over said dielectric layer;
- forming a protective layer over portions of said platinum layer, leaving at least one exposed portion of said platinum layer;
- forming a layer comprising silicon over said exposed portion of said platinum layer to form a layered region of silicon over platinum;
- and
- heat annealing said layered region at a predetermined temperature to form a platinum silicide.
A method of forming a semiconductor device, comprising the acts of:
- forming a platinum layer over an insulating layer provided over a semiconductor substrate;
- forming a protective layer over at least one portion of said platinum layer, leaving at least another portion of said platinum layer exposed;
- forming a polysilicon layer over said exposed platinum layer to form a layered area of polysilicon over platinum;
- and
- heat annealing said layered area at a temperature of about 450° C. to form a platinum silicide.
A method of forming a patterned metal layer, comprising the acts of:
- forming a metal layer over an insulating layer provided over a semiconductor substrate, said metal layer comprising a material selected from the group consisting of platinum, iridium, iridium oxide, ruthenium, ruthenium oxide, rhodium, osmium, osmium oxide, silver and gold;
- depositing a mask layer over said metal layer;
- patterning said mask layer to form at least one exposed portion of said metal layer;
- converting said at least one exposed portion of said metal layer to a metal silicide;
- and
- removing said metal silicide and said mask layer to obtain said patterned metal layer.
Dependencies are inferred from the claim text.