Method for anodically bonding glass and semiconducting material together
AssigneeNew Mexico Tech Research Foundation
InventorsDeidre A. Hirschfeld, W Kent Schubert, Chad S. Watson
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Abstract
A method is provided for anodically bonding glass and semiconducting material. A glass sample is immersed in a molten salt bath for a fixed period of time to modify the surface of the glass sample via ion exchange. The salt is a lithium salt or a proton source. After the glass sample is removed from the salt bath, the glass sample and semiconducting material are placed onto one another, and are then heated to a temperature of between 100° C. and 500° C. While at this temperature, a potential is applied across the glass and semiconducting material for a fixed period of time to effect anodic bonding together of the glass and semiconducting material.
Claims11
A method of anodically bonding glass and semiconducting material together, including the steps of:
- immersing a glass sample in a molten salt bath for a fixed period of time to modify the surface of the glass sample via ion exchange, wherein said salt is a lithium salt or a proton source;
- removing the glass sample from the salt bath;
- subsequently placing the glass sample and semiconducting material onto one another;
- heating the glass and semiconducting material to a temperature of between 100° C. and 500° C.;
- and
- while at said temperature, applying a potential across the glass and semiconducting material for a fixed period of time to effect anodic bonding together of the glass and semiconducting material.
Dependencies are inferred from the claim text.