Method of manufacturing a semiconductor device using laser irradiation

A method of manufacturing a semiconductor device, comprising:

• synthesizing a plurality of laser lights into a laser light by using a waveguide;
• condensing the laser light at an irradiation surface;
• and
• irradiating the laser light to a semiconductor film while relatively moving the laser light.

A method of manufacturing a semiconductor device, comprising:

• synthesizing a plurality of laser lights into a laser light by using a waveguide;
• condensing the laser light at an irradiation surface;
• and
• irradiating the laser light to a semiconductor film while moving the laser light by a deflection.

A method of manufacturing a semiconductor device, comprising:

• synthesizing a plurality of laser lights into a laser light by using a waveguide;
• condensing the laser light at an irradiation surface;
• and
• irradiating the laser light to a semiconductor film while moving the laser light in a first direction and moving the semiconductor film in a second direction.

A method of manufacturing a semiconductor device, comprising:

• emitting a plurality of laser lights from a plurality of lasers, each of the plurality of laser lights passing through a non-linear optical element;
• synthesizing the plurality of laser lights into a laser light by using a waveguide;
• condensing the laser light at an irradiation surface;
• and
• irradiating the laser light to a semiconductor film while relatively moving the laser light.

A method of manufacturing a semiconductor device, comprising:

• introducing an impurity element to a semiconductor film;
• synthesizing a plurality of laser lights into a laser light by using a waveguide;
• condensing the laser light at an irradiation surface;
• and
• irradiating the laser light to the semiconductor film while relatively moving the laser light, thereby performing an activation of the impurity element or a recovery of a crystallinity of the semiconductor film.

A method of manufacturing a semiconductor device, comprising:

• introducing an impurity element to a semiconductor film;
• synthesizing a plurality of laser lights into a laser light by using a waveguide;
• condensing the laser light at an irradiation surface;
• and
• irradiating the laser light to the semiconductor film while moving the laser light by a deflection, thereby performing an activation of the impurity element or a recovery of a crystallinity of the semiconductor film.

A method of manufacturing a semiconductor device, comprising:

• introducing an impurity element to a semiconductor film;
• synthesizing a plurality of laser lights into a laser light by using a waveguide;
• condensing the laser light at an irradiation surface;
• and
• irradiating the laser light to the semiconductor film while moving the laser light in a first direction and moving the semiconductor film in a second direction, thereby performing an activation of the impurity element or a recovery of a crystallinity of the semiconductor film.

A method of manufacturing a semiconductor device, comprising:

• introducing an impurity element to a semiconductor film;
• emitting a plurality of laser lights from a plurality of lasers, each of the plurality of laser lights passing through a non-linear optical element;
• synthesizing the plurality of laser lights into a laser light by using a waveguide;
• condensing the laser light at an irradiation surface;
• and
• irradiating the laser light to the semiconductor film while relatively moving the laser light, thereby performing an activation of the impurity element or a recovery of a crystallinity of the semiconductor film.

A laser irradiation method comprising:

• synthesizing a plurality of laser lights into a laser light by using a waveguide;
• condensing the laser light in the vicinity of the irradiation surface;
• and
• irradiating an object to be irradiated with the laser light while relatively moving the laser light.

A method of manufacturing a semiconductor device, comprising:

• synthesizing a plurality of laser lights into a laser light by using a waveguide;
• condensing the laser light in the vicinity of the irradiation surface;
• and
• irradiating the laser light to a semiconductor film while relatively moving the laser light.

A method of manufacturing a semiconductor device, comprising:

• synthesizing a plurality of laser lights into a laser light by using a waveguide;
• condensing the laser light in the vicinity of the irradiation surface;
• and
• irradiating the laser light to a semiconductor film while moving the laser light by a deflection.

A method of manufacturing a semiconductor device, comprising:

• synthesizing a plurality of laser lights into a laser light by using a waveguide;
• condensing the laser light in the vicinity of the irradiation surface;
• and
• irradiating the laser light to a semiconductor film while moving the laser light in a first direction and moving the semiconductor film in a second direction.

A method of manufacturing a semiconductor device, comprising:

• emitting a plurality of laser lights from a plurality of lasers, each of the plurality of laser lights passing through a non-linear optical element;
• synthesizing the plurality of laser lights into a laser light by using a waveguide;
• condensing the laser light in the vicinity of the irradiation surface;
• and
• irradiating the laser light to a semiconductor film while relatively moving the laser light.

A method of manufacturing a semiconductor device, comprising:

• introducing an impurity element to a semiconductor film;
• synthesizing a plurality of laser lights into a laser light by using a waveguide;
• condensing the laser light in the vicinity of the irradiation surface;
• and
• irradiating the laser light to the semiconductor film while relatively moving the laser light, thereby performing an activation of the impurity element or a recovery of a crystallinity of the semiconductor film.

A method of manufacturing a semiconductor device, comprising:

• introducing an impurity element to a semiconductor film;
• synthesizing a plurality of laser lights into a laser light by using a waveguide;
• condensing the laser light in the vicinity of the irradiation surface;
• and
• irradiating the laser light to the semiconductor film while moving the laser light by a deflection, thereby performing an activation of the impurity element or a recovery of a crystallinity of the semiconductor film.

A method of manufacturing a semiconductor device, comprising:

• introducing an impurity element to a semiconductor film;
• synthesizing a plurality of laser lights into a laser light by using a waveguide;
• condensing the laser light in the vicinity of the irradiation surface;
• and
• irradiating the laser light to the semiconductor film while moving the laser light in a first direction and moving the semiconductor film in a second direction, thereby performing an activation of the impurity element or a recovery of a crystallinity of the semiconductor film.

A method of manufacturing a semiconductor device, comprising:

• introducing an impurity element to a semiconductor film;
• emitting a plurality of laser lights from a plurality of lasers, each of the plurality of laser lights passing through a non-linear optical element;
• synthesizing the plurality of laser lights into a laser light by using a waveguide;
• condensing the laser light in the vicinity of the irradiation surface;
• and
• irradiating the laser light to the semiconductor film while relatively moving the laser light, thereby performing an activation of the impurity element or a recovery of a crystallinity of the semiconductor film.