Implantation method for simultaneously implanting in one region and blocking the implant in another region
AssigneeTexas Instruments Incorporated
InventorMark S. Rodder
Life of this patent
Estimating the term…
Abstract
A method of fabricating different transistor structures with the same mask. A masking layer (214) has two openings (204, 202) that expose two transistor areas (304,302). The width of the second opening (202) is adjusted such that the angled implant is substantially blocked from the second transistor area (302). The angled implant forms pocket regions in the first transistor area (304). The same masking layer (214) may then be used to implant source and drain extension regions in both the first and second transistor areas (304, 302).
Claims14
A method of fabricating an integrated circuit, comprising the steps of:
- forming a layer over a semiconductor body, said layer exposing a first region and a second region of the semiconductor body, wherein a width of said second region is less than a width of said first region;
- implanting a dopant into said semiconductor body at an angle, phi, from normal using said layer and rotating the semiconductor body at off angles, theta, so as to implant the dopant into the first exposed region but not substantially into the second exposed region.
A method of fabricating an integrated circuit, comprising the steps of:
- forming a first gate structure for a first transistor and a second gate structure for a second transistor over a semiconductor body;
- forming a masking layer having at least two openings over the semiconductor body, a first of said openings exposing a portion of said first transistor and having a first width and a second of said openings exposing a portion of the second transistor and having a second width less than said first width;
- angle implanting a dopant into said semiconductor body using said masking layer at a wafer rotational angle, theta, such that a pocket region is formed in said first transistor but not in said second transistor due to shadowing from said masking layer.
Dependencies are inferred from the claim text.