Methods of forming integrated circuit devices having gate oxide layers with different thicknesses and integrated circuit devices formed thereby
AssigneeSamsung Electronics Co., Ltd.
InventorsSeung-hoon Han, Duck-hyung Lee, Dong-woo Kim
Life of this patent
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Abstract
An integrated circuit device, such as a merged device, is formed by forming a first gate oxide layer on a first region, such as a logic circuit region, of a substrate. A conductive layer is formed on the first gate oxide layer. A second gate oxide layer is formed on a second region, such as a cell array region, of the substrate. A first gate pattern is formed on the second gate oxide layer. The conductive layer and the first gate oxide layer are patterned to form a second gate pattern. A silicide layer is formed on the second gate pattern and in the substrate adjacent to the second gate pattern.
Claims24
A method of forming an integrated circuit device, comprising:
- forming a first gate oxide layer on a first region of a substrate;
- forming a conductive layer on the first gate oxide layer;
- forming a second gate oxide layer on the conductive layer and on a second region of the substrate;
- forming a first gate pattern on the second gate oxide layer;
- forming an anti-reflective layer on the second gate oxide layer in the first region of the substrate;
- patterning the anti-reflective layer to form an anti-reflective layer pattern;
- etching the second gate oxide layer, the conductive layer, and the first gate oxide layer using the anti-reflective layer pattern as an etching mask to form a second gate pattern;
- and
- forming a silicide layer on the second gate pattern and in the substrate adjacent to the second gate pattern.
A method of fabricating an integrated circuit device, comprising:
- forming a first gate oxide layer on a first region of a substrate;
- forming a conductive layer on the first gate oxide layer;
- forming a second gate oxide layer on the conductive layer and on a second region of the substrate;
- forming a first gate pattern on the second gate oxide layer;
- forming an anti-reflective layer on the second gate oxide layer in the first region of the substrate;
- patterning the anti-reflective layer to form an anti-reflective layer pattern;
- etching the second gate oxide layer, the conductive layer, and the first gate oxide layer using the anti-reflective layer pattern as an etching mask to form a second gate pattern;
- forming a blocking layer pattern on the first region of the substrate such that the substrate is exposed adjacent to the second gate pattern;
- and
- forming a silicide layer on the second gate pattern and in the substrate adjacent to the second gate pattern.
A method of forming an integrated circuit device, comprising:
- forming a first gate oxide layer on a first region of a substrate;
- forming a conductive layer on the first gate oxide layer;
- forming a second gate oxide layer on a second region of the substrate;
- forming a first gate pattern on the second gate oxide layer;
- patterning the conductive layer and the first gate oxide layer to form a second gate pattern;
- forming a blocking layer pattern on the first region of the substrate such that the substrate is exposed adjacent to the second gate pattern;
- and
- forming a silicide layer on the second gate pattern and in the substrate adjacent to the second gate pattern.
Dependencies are inferred from the claim text.