US 6,660,574 B1 · Method of forming a semiconductor device including recombination center neutralizer

Abstract

A method of forming a semiconductor device wherein treatment gate insulating layer is formed such that its edges extend beyond edges of a gate electrode. Specifically, the method includes the steps of forming a non-single crystalline semiconductor layer on an insulating surface, forming a gate electrode on the semiconductor layer with a gate insulating layer formed therebetween, doping portions of the semiconductor layer with an impurity to form source and drain regions, and exposing the doped portions with light to crystallize the portions and activate the dopant. Since the gate electrode extends beyond the edges of the gate electrode, the doping of the portions of the semiconductor layer and the exposure to light irradiation is carried out through a part of the gate insulating layer.

Claims6

Dependent claims

A method of forming a semiconductor device comprising the steps of:

forming a non-single crystalline semiconductor layer containing a recombination center neutralizer on an insulating surface of a substrate;
forming a gate electrode on said semiconductor layer with a gate insulating layer therebetween;
doping portions of said semiconductor layer with an impurity to form source and drain regions;
and
exposing said portions to light irradiation in order to crystallize said portions or activate dopant impurities contained therein;
wherein said gate insulating layer extends beyond an edge of said gate electrode and covers said portions of the semiconductor layer, and the doping of said portions and the exposure of said portions to light irradiation are carried out through a part of said gate insulating layer located on said portions.

3 more elements

Dependencies are inferred from the claim text.

Facts

Application

08/171,769Filed 22 Dec 1993 · continuation

Priority

JP 59-10025018 May 1984

Granted

9 Dec 2003

Term ends

Not estimatedThe source records don’t support an estimate.

Classification16 codes

H10D 30/0314
Characterised by the gate electrodes: of lateral top-gate TFTs comprising only a single gate
H10D 30/0321
Of thin-film transistors [TFT]: comprising silicon, e.g. amorphous silicon or polysilicon
H10D 30/6713
Having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device:…
H10D 30/6731
Characterised by the shapes, relative sizes or dispositions of the gate electrodes: top-gate only TFTs

Family

Application06/735,697Parent of this continuation · filed 20 May 1985

Application07/153,477Parent of this division · filed 3 Feb 1988

Application07/520,756Parent of this continuation · filed 9 May 1990

Application07/707,178Parent of this division · filed 24 May 1991

Application07/885,643Parent of this continuation · filed 19 May 1992

Application07/885,643Parent of this division

US 5,142,344 AParent of this division

Application07/707,178Parent of this continuation

Application07/520,756Parent of this division

US 4,959,700 AParent of this division

Application07/153,477Parent of this continuation

US 6,660,574 B1This patent

From the US filing history. Foreign family members aren’t listed.

Method of forming a semiconductor device including recombination center neutralizer

Life of this patent

Method of forming a semiconductor device including recombination center neutralizer

Life of this patent

Abstract

Claims6