Method for producing a power semiconductor device with a stop zone
AssigneeEUPEC Europaeische Gesellschaft fuer Leitungshalbleiter mbH & Co. KG
InventorsReiner Barthelmess, Hans-Joachim Schulze
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Abstract
A method of fabricating a silicon power semiconductor with a stop zone includes forming a stop zone by driving oxygen into a semiconductor substrate in a targeted manner and subsequently heating the oxygen with the semiconductor substrate to form thermal donors, and producing, at or near a surface of the semiconductor substrate, an increased oxygen concentration in comparison with other semiconductor regions by ion implantation.
Claims14
A method of fabricating a power semiconductor with a stop zone, which comprises the steps in the following sequence of:
- producing, in a vicinity of a surface of a semiconductor substrate, an increased oxygen concentration in comparison with other semiconductor regions by ion implantation;
- and then
- forming a stop zone by driving the oxygen from the vicinity of the substrate into the semiconductor substrate in a targeted manner and subsequently heating the oxygen with the semiconductor substrate to form thermal donors.
A method of fabricating a power semiconductor with a stop zone, which comprises the steps in the following sequence:
- producing, at a surface of a semiconductor substrate, an increased oxygen concentration in comparison with other semiconductor regions by ion implantation;
- and then
- forming a stop zone by driving the oxygen from the surface of the substrate into the semiconductor substrate in a targeted manner and subsequently heating the oxygen with the semiconductor substrate to form thermal donors.
A method of fabricating a power semiconductor with a stop zone, which comprises the steps in the following sequence:
- producing, adjacent a surface of a semiconductor substrate, an increased oxygen concentration in comparison with other semiconductor regions by ion implantation;
- and then
- forming a stop zone by driving the oxygen from adjacent the surface of the substrate into the semiconductor substrate in a targeted manner and subsequently heating the oxygen with the semiconductor substrate to form thermal donors.
Dependencies are inferred from the claim text.