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US 6,660,554 B2Granted
Thermistor and method of manufacture
OwnerGregg J. Lavenutainventor
Life of this patent
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Abstract
A thermistor having multiple metal layers about at least a portion of a semiconductor body. The thermistor includes a first thick film electrode layer, a reactive metal layer, a barrier metal layer and, optionally, a layer to facilitate attachment to an electrical contact. Also, a method of making the thermistor is described.
Claims10
A method of manufacturing a thermistor comprising of the steps of:
- (a) forming a semiconductor body having opposed sides;
- (b) depositing a first electrode layer on at least a portion of each said opposed sides of said semiconductor body by a thick film deposition method, said first electrode layer comprising a conductive metal and having a thickness of from about 10 to about 40 micrometers;
- (c) depositing a second electrode layer on said first electrode layer, said second electrode layer comprising titanium and having a thickness of from about 0.05 to about 1.0 micrometer;
- (d) depositing a third electrode layer on said second electrode layer, said third electrode layer comprising platinum and having a thickness of from about 0.05 to about 2.0 micrometers;
- and
- (e) optionally, depositing a fourth electrode layer on said third electrode layer, said fourth electrode layer having a thickness of from about 0.3 to about 5.0 micrometers.
3 more elements
A method of manufacturing a thermistor consisting essentially of the steps of:
- (a) forming a semiconductor body having opposed sides;
- (b) depositing a first electrode layer on at least a portion of each said opposed sides of said semiconductor body by a thick film deposition method, said first electrode layer comprising a conductive metal and having a thickness of from about 10 to about 40 micrometers;
- (c) depositing a second electrode layer on said first electrode layer, said second electrode layer comprising titanium and having a thickness of from about 0.05 to about 1.0 micrometer;
- (d) depositing a third electrode layer on said second electrode layer, said third electrode layer comprising platinum and having a thickness of from about 0.05 to about 2.0 micrometers;
- and
- (e) optionally, depositing a fourth electrode layer on said third electrode layer, said fourth electrode layer having a thickness of from about 0.3 to about 5.0 micrometers.
3 more elements
Dependencies are inferred from the claim text.