Surface emission type semiconductor light-emitting device and method of manufacturing the same
AssigneeSeiko Epson Corporation
InventorAtsushi Sato
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Abstract
A method of manufacturing a semiconductor light-emitting device includes: a step of forming a stacked semiconductor layer having a plurality of columnar portions over a semiconductor substrate, a step of forming an embedding insulation layer of a resin material around each of the columnar portions, and a step of separating a wafer to form chips. In the step of forming the stacked semiconductor layer having the columnar portions, a separating semiconductor layer of a given pattern is formed in boundary regions of the chips; in the step of forming the embedding insulation layer, at least an upper surface of the separating semiconductor layer is exposed; and in the step of forming the chips, the separation is carried out using the separating semiconductor layer.
Claims22
A method of manufacturing a surface emission type semiconductor light-emitting device comprising:
- a step of forming a stacked semiconductor layer having a plurality of columnar portions over a semiconductor substrate;
- a step of forming an embedding insulation layer of a resin material around each of the columnar portions;
- and
- a step of separating the semiconductor substrate and layers on the semiconductor substrate to form chips,
- wherein in the step of forming the stacked semiconductor layer having the columnar portions, a separating semiconductor layer of a given pattern is formed in boundary regions of the chips,
- wherein in the step of forming the embedding insulation layer, at least an upper surface of the separating semiconductor layer is exposed, and
- wherein in the step of forming the chips, the separation is carried out using the separating semiconductor layer.
A surface emission type semiconductor light-emitting device, the semiconductor light-emitting device comprising:
- a stacked semiconductor layer formed over a semiconductor substrate, and having a columnar portion;
- an embedding insulation layer of a resin material formed around the columnar portion;
- an electrode layer formed on at least a part of an upper surface of the columnar portion and a part of an upper surface of the embedding insulation layer;
- and
- a separating semiconductor layer formed above an edge region of the semiconductor substrate.
Dependencies are inferred from the claim text.