Method of manufacturing an active matrix type display circuit

A method of manufacturing a semiconductor device comprising the steps of:

• forming a thin film transistor over a substrate, said thin film transistor having a gate electrode, a gate insulating film and a semiconductor film;
• forming a first insulating film over said thin film transistor;
• forming a second insulating film over said first insulating film;
• forming a third insulating film over said second insulating film;
• forming a contact hole in said second and third insulating films;
• and
• forming a black matrix over said third insulating film so that said black matrix is in contact with said first insulating film via a contact hole.

A method of manufacturing a semiconductor device comprising the steps of:

• forming a thin film transistor over a substrate, said thin film transistor having a gate electrode, a gate insulating film and a semiconductor film;
• forming a first insulating film over said thin film transistor;
• forming a second insulating film over said first insulating film;
• forming a first contact hole in said first and second insulating films and said gate insulating film;
• forming a data wiring line over said second insulating film so that said data wiring line is in contact with said semiconductor film via said first contact hole;
• forming a third insulating film over said second insulating film;
• forming a second contact hole in said second and third insulating films;
• and
• forming a black matrix over said third insulating film so that said black matrix is in contact with said first insulating film via a second contact hole.

A method of manufacturing a semiconductor device comprising the steps of:

• forming a thin film transistor over a substrate, said thin film transistor having a gate electrode, a gate insulating film and a semiconductor film;
• forming a first insulating film comprising an inorganic material over said thin film transistor;
• forming a second insulating film comprising an organic resin over said first insulating film;
• forming a third insulating film comprising an organic resin over said second insulating film;
• forming a contact hole in said second and third insulating films;
• and
• forming a black matrix over said third insulating film so that said black matrix is in contact with said first insulating film via a contact hole.

A method of manufacturing a semiconductor device comprising the steps of:

• forming a thin film transistor over a substrate, said thin film transistor having a gate electrode, a gate insulating film and a semiconductor film;
• forming a first insulating film comprising an inorganic material said thin film transistor;
• forming a second insulating film comprising an organic material over said first insulating film;
• forming a first contact hole in said first and second insulating films and said gate insulating film;
• forming a data wiring line over said second insulating film so that said data wiring line is in contact with said semiconductor film via said first contact hole;
• forming a third insulating film comprising an organic material over said second insulating film;
• forming a second contact hole in said second and third insulating films;
• and
• forming a black matrix over said third insulating film so that said black matrix is in contact with said first insulating film via a second contact hole.

A method of manufacturing a semiconductor device comprising the steps of:

• forming a thin film transistor over a substrate, said thin film transistor having a gate electrode, a gate insulating film and a semiconductor film;
• forming a first insulating film over said thin film transistor;
• forming a second insulating film over said first insulating film;
• forming a third insulating film over said second insulating film;
• forming a contact hole in said second and third insulating films;
• forming a conductive film over said third insulating film so that said conductive film is in contact with said first insulating film via a contact hole;
• forming a fourth insulating film over said third insulating film;
• and
• forming a pixel electrode over said fourth insulating film.

A method of manufacturing a semiconductor device comprising the steps of:

• forming a thin film transistor over a substrate, said thin film transistor having a gate electrode, a gate insulating film and a semiconductor film;
• forming a first insulating film over said thin film transistor;
• forming a second insulating film over said first insulating film;
• forming a first contact hole in said first and second insulating films and said gate insulating film;
• forming a data wiring line over said second insulating film so that said data wiring line is in contact with said semiconductor film via said first contact hole;
• forming a third insulating film over said second insulating film;
• forming a second contact hole in said second and third insulating films;
• forming a conductive film over said third insulating film so that said conductive film is in contact with said first insulating film via a second contact hole;
• forming a fourth insulating film over said third insulating film;
• forming a third contact hole in said first, second, third and fourth insulating films and said gate insulating film;
• and
• forming a pixel electrode over said fourth insulating film so that said pixel electrode is in contact with said semiconductor film via said third contact hole.