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US 6,660,545 B2Granted
Semiconductor device and manufacturing method therefor, circuit substrate, and electronic apparatus
AssigneeSeiko Epson Corporation
InventorMasahiro Furusawa
Life of this patent
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Abstract
A device and manufacturing method for a semiconductor device includes the steps of forming a penetration hole 50 in a semiconductor chip 10 having an electrode 14, and forming a conductive layer 70 in the region including the inside of the penetration hole 50. Regarding the penetration hole 50, an intermediate portion is formed to be larger than an open end portion, and the conductive layer 70 is formed by applying a coating of a liquid containing metal fine particles by an ink-jet method.
Claims21
A manufacturing method for a semiconductor device, comprising:
- forming a penetration hole in a semiconductor element having an electrode;
- and
- forming a conductive layer in a region including an interior of the penetration hole, the conductive layer being manufactured by:
- coating a part of the semiconductor element with a liquid containing metal fine particles by an ink-jet method, and
- converting the liquid into the conductive layer by heat treatment.
2 more elements
Dependencies are inferred from the claim text.