Method of measuring implant profiles using scatterometric techniques wherein dispersion coefficients are varied based upon depth

A method, comprising:

• providing a semiconducting substrate;
• forming a first plurality of implant regions in said substrate;
• illuminating at least one of said first plurality of implant regions with a light source in a scatterometry tool, said scatterometry tool generating a profile trace corresponding to an implant profile of said illuminated at least one implant region;
• creating a library comprised of a plurality of created profile traces, wherein said created profile traces are representative of implant regions having varying implant profiles, and, in creating said created profile traces, values of at least one of an index of refraction (n) and a dielectric constant (k) are varied;
• and
• matching said generated profile trace to at least one of said created profile traces in said library.

A method, comprising:

• providing a semiconducting substrate;
• forming a first plurality of implant regions in said substrate;
• illuminating at least one of said first plurality of implant regions with a light source in a scatterometry tool, said scatterometry tool generating a profile trace corresponding to an implant profile of said illuminated at least one implant region;
• creating a target profile trace that is representative of a desired profile of said at least one implant region, wherein, in creating said target profile trace, values of at least one of an index of refraction (n) and a dielectric constant (k) are varied;
• and
• comparing said generated profile trace to said target profile trace.

A method, comprising:

• providing a semiconducting substrate;
• forming a first plurality of implant regions in said substrate;
• illuminating at least one of said first plurality of implant regions with a light source in a scatterometry tool, said scatterometry tool generating a profile trace corresponding to an implant profile of said illuminated at least one implant region;
• creating a target profile trace that is representative of a desired profile of said at least one implant region, wherein, in creating said target profile trace, values of at least one of an index of refraction (n) and a dielectric constant (k) are varied;
• comparing said generated profile trace to said target profile trace;
• and
• modifying, based upon said comparison of said generated profile trace and said target profile trace, at least one parameter of an ion implant process used to form implant regions on subsequently processed substrates.