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US 6,660,459 B2Granted
System and method for developing a photoresist layer with reduced pattern collapse
AssigneeAdvanced Micro Devices, Inc.
InventorCarl P. Babcock
Life of this patent
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Abstract
A method of developing a photoresist layer on a semiconductor wafer in a developing chamber includes applying a developer to the photoresist layer, applying an alcohol rinse to the photoresist layer, and drying the wafer.
Claims18
A method of developing a photoresist layer on a semiconductor wafer in a developing chamber, comprising:
- applying a developer and light to the photoresist layer;
- rinsing the developed photoresist layer with a first alcohol rinse, whereby portions of the photoresist layer are removed;
- drying the photoresist layer;
- and
- rinsing the photoresist layer with a second alcohol rinse.
2 more elements
A method of patterning a photoresist layer on a semiconductor wafer, comprising:
- exposing the photoresist layer to light;
- developing portions of the photoresist layer with a photoresist developer, whereby photoresist lines remain on the wafer;
- rinsing the developed portions of the photoresist layer with a first alcohol rinse;
- drying the wafer;
- and
- providing a second alcohol rinse before, during, or after the drying step.
3 more elements
Dependencies are inferred from the claim text.