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US 6,660,414 B1Granted
Tungsten-doped thin film materials
AssigneeU.S. Department of Energy
InventorsXiao-Dong Xiang, Hauyee Chang, Chen Gao, Ichiro Takeuchi, Peter G. Schultz
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AssigneeU.S. Department of Energy
InventorsXiao-Dong Xiang, Hauyee Chang, Chen Gao, Ichiro Takeuchi, Peter G. Schultz
Estimating the term…
A dielectric thin film material for high frequency use, including use as a capacitor, and having a low dielectric loss factor is provided, the film comprising a composition of tungsten-doped barium strontium titanate of the general formula (BaxSr1−x)TiO3, where X is between about 0.5 and about 1.0. Also provided is a method for making a dielectric thin film of the general formula (BaxSr1−x)TiO3 and doped with W, where X is between about 0.5 and about 1.0, a substrate is provided, TiO2, the W dopant, Ba, and optionally Sr are deposited on the substrate, and the substrate containing TiO2, the W dopant, Ba, and optionally Sr is heated to form a low loss dielectric thin film.
A dielectric thin film for high frequency applications comprising (BaxSr1−x)TiO3 doped with W, wherein X is between about 0.5 and 1.0, and wherein W is 1 mol % or greater, based on the total molarity of Ba, Sr, and Ti.
A dielectric thin film for high frequency applications comprising BaTiO3 doped with W, wherein W is 1 mol % or greater, based on the total molarity of Ba and Ti.
Dependencies are inferred from the claim text.