SiGeC semiconductor crystals and the method producing the same
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsTohru Saitoh, Yoshihiko Kanzawa, Katsuya Nozawa, Minoru Kubo
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Abstract
A B-doped Si1−x−yGexCy layer 102 (where 0<x<1, 0.01≦y<1) is epitaxially grown on a Si substrate 101 using a UHV-CVD process. In the meantime, in-situ doping is performed using B2H6 as a source gas of boron (B) which is an impurity (dopant). Next, the Si1−x−yGexCy layer 102 is annealed to form a B-doped Si1−x−yGexCy crystalline layer 103. In this case, the annealing temperature is set preferably at between 700° C. and 1200° C., both inclusive, and more preferably at between 900° C. and 1000° C., both inclusive.
Claims3
An SiGeC semiconductor crystal, comprising two or more alternately stacked sets of:
- an Si1−zGez (where 0<z<1) layer which contains a carrier generating impurity;
- and
- an Si1−wCw (where 0.01≦w<1) layer which has a carrier generating impurity lower in concentration than the Si1−zGez layer,
- wherein the SiGeC semiconductor crystal functions as an SiGeC semiconductor crystal which has a composition represented by Si1−x−yGexCy (where 0≦x<1, 0.01<y<1).
Dependencies are inferred from the claim text.