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US 6,660,391 B1Granted
Low κ dielectric inorganic/organic hybrid films and method of making
AssigneeASML US, Inc.
InventorsPeter Rose, Eugene Lopata, John Felts
Life of this patent
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Abstract
A method of depositing a dielectric film exhibiting a low dielectric constant in a semiconductor and/or integrated circuit by chemical vapor deposition (CVD) is provided. The film is deposited using an organosilicon precursor in a manner such that the film is comprised of a backbone made substantially of Si—O—Si or Si—N—Si groups with organic side groups attached to the backbone.
Claims8
A dielectric film on a semiconductor or integrated circuit having a low dielectric constant, comprising:
- a backbone structure comprised substantially of inorganic groups wherein the backbone structure is formed in a three dimensional, cross linked matrix of Si-N-Si groups;
- and
- organic side groups attached to said backbone structure to form a hybrid of inorganic and organic materials that provide said film having a dielectric constant of less than 4.0 and exhibiting weight loss of less than 2% per hour at 400° C. in nitrogen.
Dependencies are inferred from the claim text.