Low temperature chemical vapor deposition of thin film magnets

A process of depositing a magnetic thin film upon a substrate by chemical vapor deposition in the absence of a solvent, the process comprising:

• providing a temperature and pressure controlled reaction chamber;
• providing a substrate within the reaction chamber;
• introducing a selected quantity of TCNE within the reaction chamber;
• providing a supply of a vanadium-containing compound in communication with the reaction chamber;
• introducing at least one inert or noble gas into the reaction chamber within a selected flow rate range;
• introducing a controlled amount of the vanadium-containing compound into the reaction chamber to react with the TCNE;
• and
• allowing the vanadium-containing compound and the TCNE to react within a selected process temperature range and within a selected process pressure range until a magnetic thin film within a selected range of thickness has been disposed upon the substrate.