US 6,660,245 B1 · Methods for detemplating zeolites and silicalites for use in integrated circuit manufacture

Abstract

Structure-directing agents, such as quaternary ammonium, are removed from silicalite or zeolite crystals by oxidative attack (e.g., using CO2, H2O or NH3) first, by using a combination of ammonia, water and hydrogen peroxide at an elevated temperature; second, by using choline, hydrogen peroxide and a surfactant; third, by using ozonated water; and fourth, by exposing the crystals to an oxygen-containing plasma. Thin porous films of silicalite or zeolite crystals are useful, for example, in forming low dielectric constant insulating layers in semiconductor chip fabrication. In order for the silicalite or zeolite crystals to form a low dielectric constant film, however, the entrained molecules of the structure-directing agent must be removed.

Claims25

Dependent claims

A method of removing a quaternary ammonia molecule from a colloidal suspension of silicalite or zeolite crystals in an aqueous suspension comprising:

adding a mixture of water, ammonium hydroxide and hydrogen peroxide to said aqueous suspension, producing thereby a strongly oxidizing environment.

Dependencies are inferred from the claim text.

Methods for detemplating zeolites and silicalites for use in integrated circuit manufacture

Life of this patent

Methods for detemplating zeolites and silicalites for use in integrated circuit manufacture

Life of this patent

Abstract

Claims25