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US 6,660,154 B2Granted
Seed layer
AssigneeShipley Company, L.L.C.
InventorsDavid Merricks, Denis Morrissey, Martin W. Bayes, Mark Lefebvre, James G. Shelnut, Donald E. Storjohann
Life of this patent
Estimating the term…
Abstract
Disclosed are methods for repairing or enhancing discontinuous metal seed layers prior to subsequent metallization during the manufacture of electronic devices. Such repair methods do not require the use of a second electroplating bath.
Claims18
A method of electrodepositing a metal layer on the surface of a discontinuous metal seed layer comprising the steps of:
- contacting the discontinuous metal seed layer disposed on an integrated circuit substrate with a copper colloid composition comprising a minor amount of ionizable palladium compound and a major amount of copper colloid particles to form a substantially continuous metal seed layer;
- and electrodepositing a metal layer on the substrate with an electroplating solution comprising one or more metal ions and an electrolyte, wherein the integrated circuit substrate has one or more apertures having a size of ≦1 μm.
A method of manufracturing an integrated circuit device comprising the steps of:
- contacting a discontinuous metal seed layer disposed on an integrated circuit device substrate with a copper colloid composition comprising a minor amount of ionizable palladium compound and a major amount of copper colloid particles to form a copper colloid surface;
- and electrodepositing a metal layer on the integrated circuit device substrate with an electroplating solution comprising one or more metal ions and an electrolyte, wherein the integrated circuit device substrate has one or more apertures having a size of ≦1 μm.
Dependencies are inferred from the claim text.