Seed layer repair bath
AssigneeShipley Company, L.L.C.
InventorsDavid Merricks, Denis Morrissey, Martin W. Bayes, Mark Lefebvre, James G. Shelnut, Donald E. Storjohann
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Abstract
Disclosed are methods for repairing seed layers prior to subsequent metallization during the manufacture of electronic devices.
Claims15
A method of providing a metal seed layer substantially free of discontinuities disposed on a substrate having apertures comprising the steps of contacting a metal seed layer having discontinuities disposed on the substrate having apertures with an electroplating bath comprising one or more sources of copper ions and an acidic electrolyte, wherein the copper ions are present in an amount up to 10 g/L.
A method of manufacturing an integrated circuit comprising the step of contacting a metal seed layer having discontinuities disposed on a substrate having apertures with an electroplating bath comprising one or more sources of copper ions and an acidic electrolyte, wherein the copper ions are present in an amount up to 10 g/L to provide a metal seed layer substantially free of discontinuities;
- optionally rinsing the substrate;
- and then contacting the substrate with a metallization bath to fill the apertures.
Dependencies are inferred from the claim text.