Polishing system and polishing method
AssigneeTokyo Electron Limited
InventorsTetsu Kawasaki, Mitsuaki Iwashita
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AssigneeTokyo Electron Limited
InventorsTetsu Kawasaki, Mitsuaki Iwashita
Estimating the term…
A wafer having a polished surface of copper is caused to contact a pad serving as an abrasive member, and the copper is polished while supplying a slurry containing mechanical and chemical polishing particles. Thereafter, when a finishing member of diamond having a large number of fine protrusions is scanned while the finishing member contacts the surface of the pad, a chelating agent, such as oxtail acid, is supplied to the surface of the pad as a dressing solution. Thus, reaction products, which have been produced by the reactions of copper with the slurry and which have adhered to the surface of the pad to be difficult to be dissolved in water, are dissolved, so that the reaction products can be removed in a short time. Thus, the reaction products having adhered to the abrasive member after polishing the wafer can be remove in a short time, so that the time required to carry out the CMP process can be shortened.
A polishing system comprising:
Dependencies are inferred from the claim text.