Polycrystal thin film forming method and forming system
AssigneeFujitsu Limited
InventorsAkito Hara, Kuninori Kitahara
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Abstract
A polycrystal thin film forming method comprising the step of forming a semiconductor thin film on a substrate 14, and the step of flowing a heated gas to the semiconductor thin film while an energy beam 38 is being applied to the semiconductor thin film at a region to which the gas is being applied to thereby melt the semiconductor film, and crystallizing the semiconductor thin film in its solidification. The energy beam is applied while the high-temperature gas is being flowed, whereby the melted semiconductor thin film can have low solidification rate, whereby the polycrystal thin film can have large crystal grain diameters and can have good quality of little defects in crystal grains and little twins.
Claims6
A polycrystal thin film forming system comprising:
- a gas blowing means for blowing a heated gas on a semiconductor thin film formed on a substrate;
- and
- an energy beam applying means for applying an energy beam to the semiconductor thin film to melt the semiconductor thin film at a region to which the gas is being applied,
- wherein the semiconductor thin film is crystallized in solidification to form a polycrystal thin film.
Dependencies are inferred from the claim text.