Cleaning gas and method for cleaning vacuum treatment apparatus by flowing the cleaning gas
AssigneesCentral Glass Company, Limited, Tokyo Electron Limited
InventorsIsamu Mouri, Tetsuya Tamura, Mitsuya Ohashi, Tadayuki Kawashima, Masahiko Matsudo, Tatsuo Hatano
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Abstract
A cleaning gas includes HF gas whose concentration is greater than or equal to 1 vol % and oxygen containing gas whose concentration ranges from 0.5 to 99 vol %. The oxygen containing gas includes at least one of O2 gas, O3 gas, N2O gas, NO gas, CO gas and CO2 gas. The cleaning gas is employed to remove a deposited material generated in a vacuum treatment apparatus for producing a thin film of at least one of Ti, W, Ta, Ru, Ir, a compound thereof and an alloy thereof.
Claims11
A method for removing a deposited material from inside surfaces of a vacuum treatment apparatus for forming a thin film of one of Ti, W, Ta, Ru and Ir, a compound including one of Ti, W, Ta, Ru and Ir or an alloy including one of Ti, W, Ta, Ru and Ir, said method comprising flowing a cleaning gas in a vacuum chamber,
- wherein the cleaning gas comprises HF gas and oxygen containing gas, a concentration of the HF gas is greater than or equal to 1 vol %, and a concentration of said oxygen containing gas ranges from 0.5 to 99 vol %, and a sum of a partial pressure of the HF as and partial pressure of the oxygen containing gas during the cleaning gas flowing is smaller than or equal to 500 Torr.
Dependencies are inferred from the claim text.