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US 6,658,948 B2Granted
Semiconductor dynamic quantity sensor
AssigneeDenso Corporation
InventorsShinji Yoshihara, Yasutoshi Suzuki
Life of this patent
Estimating the term…
Abstract
A bridge circuit includes four gage resistors. Each gage resistor is divided into two division gage resistors. A couple of division gage resistors. The junction points between division gage resistors outputting the same potential when no pressure is applied are used for diagnostic. Four gage resistors out of the eight gage resistors are arranged near the center of diaphragm 14, and the other four division resistors are arranged near the peripheral edge portion of the diaphragm 14 to make the stress distribution even.
Claims14
A semiconductor dynamic quantity sensor comprising:
- a semiconductor substrate having a diaphragm elastically deformed in accordance with application of a dynamic quantity with a stress distribution over at least said diaphragm;
- and
- a bridge circuit including four gage resistors in said diaphragm, resistances of said gage resistors varying on the basis of stresses due to said stress distribution, respectively, said bridge circuit having first and second potential terminal inputs and having two outputs at intermediate junction points between said first and second terminal inputs, each of said four gage resistors including a plurality of division gage resistors which are separated into first and second groups, wherein said first group of division gage resistors are arranged at a first place near the center of said diaphragm such that said division gage resistors of said first group receive stresses due to said stress distribution, magnitudes of which stresses are even each other, and said second group of division gage resistors are arranged near a peripheral edge of said diaphragm such that said division gage resistors of said second group receive said stresses due to said stress distribution, magnitudes of which stresses are even with each other.
Dependencies are inferred from the claim text.