Method of eliminating photoresist poisoning in damascene applications
AssigneeApplied Materials, Inc.
InventorsPing Xu, Li-Qun Xia, Larry A. Dworkin, Mehul Naik
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Abstract
A method is provided for processing a substrate including treating a surface of a dielectric layer comprising silicon and carbon by exposing the dielectric layer comprising silicon and carbon to a plasma of an inert gas, and depositing a photoresist on the dielectric layer comprising silicon and carbon. The dielectric layer may comprise a first dielectric layer comprising silicon, carbon, and nitrogen, and a second layer of nitrogen-free silicon and carbon containing material in situ on the first dielectric layer, and a third dielectric layer comprising silicon, oxygen, and carbon on the second dielectric layer.
Claims17
A method for processing a substrate, comprising:
- depositing a nitrogen-doped dielectric layer on the substrate;
- depositing a dielectric layer comprising silicon and carbon on the nitrogen-doped dielectric layer;
- treating a surface of the dielectric layer comprising silicon and carbon by exposing the dielectric layer comprising silicon and carbon to a plasma of an inert gas;
- and
- depositing a photoresist on the dielectric layer comprising silicon and carbon.
A method for processing a substrate, comprising:
- depositing a first dielectric layer comprising silicon, carbon, and nitrogen on the substrate;
- depositing a nitrogen-free silicon containing material in situ on the dielectric layer;
- depositing a second dielectric layer comprising silicon, oxygen, and carbon on the nitrogen-free silicon containing material by chemical vapor deposition;
- and
- depositing a photoresist on the second dielectric layer.
Dependencies are inferred from the claim text.