Method for manufacturing a capacitor for semiconductor devices
AssigneeHyundai Electronic Industries Co., Ltd.
InventorsDong Su Park, Byoung Kwon Ahn
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Abstract
A capacitor for a semiconductor device is manufactured by forming a lower structure on a semiconductor device, forming a lower electrode on the lower structure of the semiconductor device, forming a dielectric thin film by depositing an amorphous TaON film on the surface of the lower electrode, and supplying a Ta source gas in a mono-pulse manner and continuously supplying a reaction gas even when the Ta source gas is not supplied, and forming an upper electrode on the upper portion of the dielectric thin film.
Claims30
A method for manufacturing a capacitor in a semiconductor device comprising:
- forming a lower structure on a semiconductor device;
- forming a lower electrode on the lower structure of the semiconductor device;
- forming a dielectric thin film by depositing an amorphous TaON film on a surface of the lower electrode, and supplying a Ta source gas in a mono-pulse manner and continuously supplying a reaction gas even when the Ta source gas is not being supplied;
- and
- forming an upper electrode on the upper portion of the dielectric thin film;
- wherein, before the amorphous TaON film is deposited, the surface of the lower electrode is nitrified by using plasma at a temperature between about 300 C. and 600 C. in an NH3 atmosphere for about 0.5 to 10 minutes.
A method for manufacturing a capacitor for a semiconductor device comprising:
- forming a lower structure on a semiconductor device;
- forming a lower electrode on the lower structure of the semiconductor device;
- nitrifying a surface of the lower electrode by plasma or through a metal thermal process;
- forming an amorphous TaON film on the surface of the lower electrode, and supplying a Ta source gas in a mono-pulse manner and continuously supplying a reaction gas even when the Ta source gas is not being supplied;
- crystallizing the amorphous TaON film by a thermal process or an annealing process;
- and
- forming an upper electrode on the upper portion of the dielectric film;
- wherein, after the amorphous TaON is deposited, a surface of the amorphous TaON film is nitrified in an atmosphere of one of NH3 and N2/H2 at a temperature between about 200° C. and 600° C. by using plasma.
A method for manufacturing a capacitor in a semiconductor device comprising:
- forming a lower structure on a semiconductor device;
- forming a lower electrode on the lower structure of the semiconductor device;
- forming a dielectric thin film by depositing an amorphous TaON film on a surface of the lower electrode, and supplying a Ta source gas in a mono-pulse manner and continuously supplying a reaction gas even when the Ta source gas is not being supplied;
- and
- forming an upper electrode on the upper portion of the dielectric thin film;
- wherein, after the amorphous TaON is deposited, a surface of the amorphous TaON film is nitrified in an atmosphere of one of NH3 and N2/H2 at a temperature between about 200 C. and 600 C. by using plasma.
Dependencies are inferred from the claim text.