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US 6,656,779 B1Granted
Semiconductor apparatus having semiconductor circuits made of semiconductor devices, and method of manufacture thereof
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorKenji Kasahara
Life of this patent
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Abstract
A semiconductor device comprises a first insulating film provided over a substrate and heat-treated, a second insulating film provided over the first insulating film, and a semiconductor film provided over the second insulating film, the second insulating film and the semiconductor film being formed successively without exposing them to the atmosphere.
Claims62
A method of manufacturing a semiconductor device comprising:
- forming a first insulating film over a substrate;
- heat-treating the first insulating film after performing the step of forming the first insulating film;
- successively forming over the first insulating film a second insulating film and a semiconductor film in laminated layers without exposing them to the atmosphere, the semiconductor film being formed over the second insulating film;
- and
- crystallizing the semiconductor film to form a crystalline semiconductor film,
- wherein the step of forming the second insulating film and the semiconductor film is conducted after performing the step of heat-treating the first insulating film.
3 more elements
A method of manufacturing a semiconductor device comprising:
- forming a first insulating film over a substrate;
- heat-treating the first insulating film after performing the step of forming the first insulating film;
- successively forming over the first insulating film a second insulating film and a semiconductor film in laminated layers without exposing them to the atmosphere, the semiconductor film being formed over the second insulating film;
- introducing into at least a part of the semiconductor film an element for accelerating crystallization;
- and
- crystallizing the semiconductor film to form a crystalline semiconductor film,
- wherein the step of forming the second insulating film and the semiconductor film is conducted after performing the step of heat-treating the first insulating film.
4 more elements
A method of manufacturing a semiconductor device comprising:
- forming a first insulating film over a substrate;
- heat-treating the first insulating film after performing the step of forming the first insulating film;
- successively forming over the first insulating film a second insulating film and a semiconductor film in laminated layers without exposing them to the atmosphere, the semiconductor film being formed over the second insulating film;
- introducing into at least a part of the semiconductor film an element for accelerating crystallization;
- crystallizing the semiconductor film to form a crystalline semiconductor film;
- and
- removing the element by gettering,
- wherein the step of forming the second insulating film and the semiconductor film is conducted after performing the step of heat-treating the first insulating film.
5 more elements
A method of manufacturing a semiconductor device comprising:
- forming a first insulating film over a substrate;
- heat-treating the first insulating film after performing the step of forming the first insulating film;
- successively forming over the first insulating film a second insulating film and a semiconductor film in laminated layers without exposing them to the atmosphere, the semiconductor film being formed over the second insulating film;
- and
- crystallizing the semiconductor film to form a crystalline semiconductor film,
- wherein the forming step of the second insulating film and the semiconductor film is conducted after performing the heat-treating step, and
- wherein the second insulating film comprises a material selected from the group consisting of silicon nitride, silicon oxynitride and silicon oxide.
4 more elements
A method of manufacturing a semiconductor device comprising:
- forming a first insulating film over a substrate;
- heat-treating the first insulating film after performing the step of forming the first insulating film;
- successively forming over the first insulating film a second insulating film and a semiconductor film in laminated layers without exposing them to the atmosphere, the semiconductor film being formed over the second insulating film;
- and
- crystallizing the semiconductor film to form a crystalline semiconductor film,
- wherein the forming step of the second insulating film and the semiconductor film is conducted after performing the heat-treating step, and
- wherein the first insulating film comprises a material selected from the group consisting of silicon nitride, silicon oxynitride and silicon oxide.
4 more elements
A method of manufacturing a semiconductor device comprising:
- forming a first insulating film over a substrate;
- heat-treating the first insulating film with a surface of the first insulating film being exposed to the atmosphere after performing the step of forming the first insulating film;
- successively forming over the first insulating film a second insulating film and a semiconductor film in laminated layers without exposing them to the atmosphere, the semiconductor film being formed over the second insulating film;
- and
- crystallizing the semiconductor film to form a crystalline semiconductor film,
- wherein the forming step of the second insulating film and the semiconductor film is conducted after performing the heat-treating step.
3 more elements
A method of manufacturing a semiconductor device comprising:
- forming a first insulating film over a substrate;
- heat-treating the first insulating film after performing the step of forming the first insulating film;
- successively forming over the first insulating film a second insulating film and a semiconductor film in laminated layers without exposing them to the atmosphere, the semiconductor film being formed over the second insulating film;
- and
- crystallizing the semiconductor film by irradiating the semiconductor film with a laser light having an output pulse width of 100 nsec or more to form a crystalline semiconductor film,
- wherein the forming step of the second insulating film and the semiconductor film is conducted after performing the heat-treating step.
3 more elements
Dependencies are inferred from the claim text.