Solid state imaging device, method of manufacturing the same, and solid state imaging system

A method of manufacturing a solid state imaging device, comprising the steps of:

• forming a first buried layer of one conductivity type in an interior of a seventh semiconductor layer of opposite conductivity type by introducing one conductivity type impurity into the seventh semiconductor layer by using a first mask;
• forming a first well region of opposite conductivity type on a surface of the seventh semiconductor layer and over the first buried layer by introducing opposite conductivity type impurity into the seventh semiconductor layer by using the first mask;
• forming a one conductivity type region connected to the first buried layer and containing the first well region by introducing one conductivity type impurity into the surface of the seventh semiconductor layer;
• forming a second buried layer of opposite conductivity type, that has higher impurity concentration than the seventh semiconductor layer, under the one conductivity type region, by introducing opposite conductivity type impurity in an interior of the seventh semiconductor layer by using a second mask;
• forming a second well region of opposite conductivity type that is connected to the first well region, by introducing opposite conductivity type impurity on a surface of the one conductivity type region and over the second buried layer by using the second mask;
• forming a channel doped layer of one conductivity type by introducing one conductivity type impurity on a surface of the second well region by using the second mask;
• forming a high concentration buried layer of opposite conductivity type, that has higher impurity concentration than the second well region, in an interior of the second well region under the channel doped layer by introducing opposite conductivity type impurity in the interior of the second well region by using a third mask;
• forming a gate insulating film on the seventh semiconductor layer by thermal oxidation;
• forming a gate electrode on the gate insulating film covering the high concentration buried layer and bringing the high concentration buried layer close to a source region side;
• forming an impurity region of one conductivity type on a surface of the first well region at a same time of forming a source region and a drain region of one conductivity type on the surface of the second well region, on both sides of the gate electrode, by introducing one conductivity type impurity on the surface of the seventh semiconductor layer;
• forming sidewalls on side surfaces of the gate electrode;
• and
• forming a resist film covering a part of the impurity region acting as a light receiving portion, and then forming a contact layer that is in contact with the drain region and has higher concentration than the drain region by introducing one conductivity impurity by using the gate electrode, the sidewalls, and the resist film as a mask.

A solid state imaging device manufacturing method comprising the steps of:

• forming a first well region of opposite conductivity type on a surface of a one conductivity type region by introducing an opposite conductivity type impurity into the one conductivity type region of a surface layer of a semiconductor substrate;
• forming a second well region of opposite conductivity type connected to the first well region by introducing the opposite conductivity type impurity into the surface of the one conductivity type region;
• forming a channel doped layer of one conductivity type by introducing a one conductivity type impurity into a surface of the second well region;
• forming a high concentration buried layer of opposite conductivity type, that has an impurity concentration higher than the second well region, in an interior of the second well region under the channel doped layer by introducing the opposite conductivity type impurity into the interior of the second well region;
• forming a gate insulating film by thermally oxidizing a surface of the semiconductor substrate;
• forming a gate electrode on the gate insulating film covering the high concentration buried layer and bringing the high concentration buried layer close to a source region side;
• forming one conductivity type source/drain regions on the surface of the second well region, on both sides of the gate electrode, and simultaneously forming a one conductivity type impurity region on the surface of the first well region, by introducing the one conductivity type impurity into the surface of the semiconductor substrate;
• and
• forming a resist film covering a part of the impurity region acting as a light receiving portion, and then forming a high concentration contact layer, in contact with the drain region and having a concentration higher than the drain region, by introducing the one conductivity type impurity while using the gate electrode and the resist film as a mask.