Method for manufacturing semiconductor image sensor with color filters and bonding pads
AssigneeDongbu Electronics Co., Ltd.
InventorJaekap Kim
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Abstract
In a method for fabricating a semiconductor device suitable for an image sensor, a bonding pad is formed on a lower insulating layer after the lower insulating layer is formed on a substrate. Then, an upper insulating layer is formed over the substrate to cover the bonding pad. The upper insulating layer is selectively removed to uncover a top portion of the bonding pad. Subsequently, a protection layer is formed over the substrate. After color filter elements are formed on the protection layer, a planar layer is formed to cover the color filter elements. Finally, microlenses are formed on the planar layer.
Claims3
A manufacturing method for a semiconductor device suitable for an image sensor, the method comprising the steps of:
- forming a lower insulating layer on a substrate;
- forming a bonding pad on the lower insulating layer;
- forming an upper insulating layer on the lower insulating layer to cover the bonding pad;
- selectively removing the upper insulating layer to uncover a top portion of the bonding pad;
- oxidizing the uncovered portion of the bonding pad to form a metallic oxide layer thereon;
- forming a multiplicity of color filter elements on the upper insulating layer;
- forming a planar layer to cover the color filter elements;
- and
- forming a multiplicity of microlenses on the planar layer.
Dependencies are inferred from the claim text.