Method of manufacturing a chip size package

A method of manufacturing a semiconductor device comprising:

• forming a groove in a dicing region of a wafer, which is provided with an insulating layer thereover, said groove having a first diameter at a shallower end of said groove and a second diameter larger than said first diameter at a deeper end of the said groove;
• providing a resin layer over said groove;
• and
• fully cutting the wafer through the groove being entirely covered with said resin layer.

A method of manufacturing a semiconductor device comprising:

• forming a groove in a dicing region of a wafer, which is provided with an insulating layer thereover, said groove formed to have an uneven side surface;
• forming the insulating layer having an opening from which a portion of an electrode pad is exposed;
• forming a wiring layer in contact with said electrode pad exposed from said opening and extending to the upper surface of the wafer;
• locating said groove on the periphery of a chip inclusive of said wiring layer, said groove having a larger diameter at a deeper end than at a shallower end by isotropically etching the groove at its deeper end;
• resin-sealing the wafer surface inclusive of said wiring layer and the groove by resin layer;
• and
• fully cutting the wafer through the groove being entirely covered with said resin layer.