US 6,656,756 B2 · Technique for a surface-emitting laser diode with a metal reflector

Abstract

The present invention is related to a method for fabricating a surface-emitting laser diode with a metal reflector. It is mainly the use of a combination of a metal reflector and wafer bonding technology to replace the traditional epiwafer process or high-temperature high-pressure wafer bonding technology in fabricating VCSEL Bragg Reflector. The metal reflector has high reflectance with its material selected to form ohmic contact with VCSEL material. Besides, the substrate for the metal reflector can be selected for cheap price and good heat dissipation. Further advantages include simple process, low production cost and good VCSEL characteristic etc.

Claims10

Dependent claims

A method of fabricating a surface-emitting laser diode with a metal reflector comprising the steps of:

(a) establishing a temporary substrate for epitaxial growth;
(b) epitaxially growing in aligned consecutive order an etching stop layer, an n-DBR layer, an n-cladding layer, an active layer, and a p-cladding layer on said temporary substrate;
(c) establishing a permanent substrate;
(d) coating said permanent substrate and said p-cladding layer with first and second metallic layers, respectively;
(e) bonding said first and second metallic layers together;
(f) removing said temporary substrate;
(g) removing said etching stop layer to form an epitaxial laser structure;
and,
(h) forming a pair of electrodes on said epitaxial laser structure.

6 more elements

Dependencies are inferred from the claim text.

Technique for a surface-emitting laser diode with a metal reflector

Life of this patent

Technique for a surface-emitting laser diode with a metal reflector

Life of this patent

Abstract

Claims10