Method for manufacturing semiconductor device by polishing
AssigneeDenso Corporation
InventorMakoto Ohkawa
Life of this patent
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Abstract
When an SOI substrate composed of a support wafer and an element formation wafer that are bonded together with an insulating film interposed therebetween is polished from a surface of the element formation wafer, a thickness of the element formation wafer is measured based on a relation between an intensity and a wavelength of a light that is irradiated to the SOI substrate from a side of the support wafer and is reflected by the SOI substrate. Thus, the measurement of the thickness of the element formation wafer can be performed simultaneouly with the polishing of the SOI substrate.
Claims9
A method for manufacturing a semiconductor device, comprising:
- preparing a semiconductor substrate having a first layer and a second layer each having a different refractive index;
- and
- polishing a surface of the semiconductor substrate at a side of the first layer while measuring a thickness of the first layer based on a relation between an intensity and a wavelength of light that is irradiated onto the second layer of the semiconductor substrate and is reflected by the semiconductor substrate at respective first and second sides of the first and second layers,
- wherein the light is irradiated while varying the wavelength of the light.
A method for manufacturing a semiconductor device, comprising:
- preparing an SOI substrate composed of a support wafer and an element formation wafer that are bonded together with an insulating film interposed therebetween;
- polishing a surface of the SOI substrate at a side of the element formation wafer;
- and
- measuring a thickness of the element formation wafer that is polished from the surface as an SOI layer, based on a relation between an intensity and a wavelength of light that is irradiated onto the SOI substrate from a side of the support wafer and that is reflected by respective surfaces of the support and element formation wafers,
- wherein the light is irradiated while varying the wavelength of the light.
A method for manufacturing a semiconductor device, comprising:
- preparing a semiconductor substrate having a first side and a second side;
- and
- polishing a surface of the semiconductor substrate at the first side while measuring a thickness of the substrate based on a light that is irradiated to the first side through the second side and is reflected from the second side;
- and
- varying a wavelength of the light while the light is irradiated.
Dependencies are inferred from the claim text.