Ferroelectric memory and method for manufacturing same
AssigneeRohm Co., Ltd.
InventorKatsumi Sameshima
Life of this patent
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Abstract
Ferroelectric memory includes a hollow formed in a first insulation film. A lower electrode is formed in this hollow by sol-gel method including an application process due to a spin coat method. In this application process, a precursor solution is dripped on a surface of the first insulation film and splashed away due to centrifugal force. Due to this, a first conductive film to being formed has an increased film thickness at portion of the hollow where the precursor solution is ready to correct, or portion to be formed into a lower electrode, and a decreased film thickness at portion other than the hollow. Accordingly, it is satisfactory to etch only the hollow portion when forming a lower electrode by dry-etching the first conductive film.
Claims8
A method for manufacturing a ferroelectric memory, comprising:
- (a) forming an insulation film on a semiconductor substrate;
- (b) forming a hollow in a surface of said insulation film;
- (c) forming a lower electrode in said hollow by a sol-gel method;
- (d) forming a ferroelectric film on said insulation film;
- and
- (e) forming an upper electrode on said ferroelectric film.
A method for manufacturing a ferroelectric memory, comprising:
- (a) forming an insulation film on a semiconductor substrate;
- (b) forming a hollow in a surface of said insulation film;
- (c) forming a lower electrode in said hollow by a sol-gel method;
- (d) forming a ferroelectric film on said insulation film;
- and
- (e) forming an upper electrode on said ferroelectric film;
- wherein said step (b) includes steps of (b1) forming a film in said insulation film at a predetermined depth position from a top surface thereof, and (b2) forming said hollow by etching said insulation film utilizing film as an etch stop.
A method for manufacturing a ferroelectric memory, comprising:
- (a) forming an insulation film on a semiconductor substrate;
- (b) forming a hollow in a surface of said insulation film;
- (c) forming a lower electrode in said hollow by a sol-gel method;
- (d) forming a ferroelectric film on said insulation film;
- (e) forming an upper electrode on said ferroelectric film;
- and
- (f) planarizing a top surface of said lower electrode, wherein a ferroelectric is formed thereon.
A method for manufacturing a ferroelectric memory, comprising:
- (a) forming an insulation film on a semiconductor substrate;
- (b) forming a hollow in a surface of said insulation film;
- (c) forming a lower electrode in said hollow;
- (d) forming a ferroelectric film on said insulation film;
- (e) forming an upper electrode on said ferroelectric film;
- (f) planarizing a top surface of said lower electrode;
- and
- (g) forming a thin film thereon of a same material as said lower electrode, wherein said ferroelectric is formed thereon.
Dependencies are inferred from the claim text.