Microlithographic exposure methods using a segmented reticle defining pattern elements exhibiting reduced incidence of stitching anomalies when imaged on a substrate

A method for manufacturing a microelectronic device, in which a pattern defined on a segmented reticle is transferred to a surface of a wafer, the pattern including pattern elements split among respective reticle subregions that are individually imaged onto the wafer surface, the method comprising:

• (a) in a first reticle subregion, defining a first pattern-element portion having a line width and a first mating end shaped as a recess flanked by respective protrusions, the protrusions each having a respective rounded distal tip and a respective width that progressively narrows toward the respective distal tip;
• (b) in a second reticle subregion, defining a second pattern-element portion having a line width and a second mating end, the second mating end having a profile that is substantially complementary to the first mating end, the second mating end including (i) a step region disposed so as to be located, whenever respective images of the first and second pattern-element portions are stitched together, adjacent the respective rounded tips of the protrusions of the first mating end, and (ii) a protrusion extending from the step region and disposed so as to be located, whenever respective images of the first and second pattern-element portions are stitched together, in the recess of the first mating end;
• and
• (c) using the charged-particle-beam lithographic-exposure apparatus, transferring the first and second reticle subregions onto the resist in a manner such that the first and second mating ends are stitched together in the pattern on the wafer.

A method for manufacturing a microelectronic device, in which a pattern defined on a segmented reticle is transferred to a surface of a wafer, the pattern including pattern elements split among respective reticle subregions that are individually imaged onto the wafer surface, the method comprising:

• (a) in a first reticle subregion, defining a first pattern-element portion having a line width and a respective mating end defining a respective protrusion extending at an oblique angle relative to a longitudinal direction of the first pattern-element portion and progressively narrowing toward a distal tip of the protrusion;
• (b) in a second reticle subregion, defining a second pattern-element portion having a line width and a respective mating end defining a respective protrusion extending at an oblique angle relative to a longitudinal direction of the second pattern-element portion and having a profile that is complementary to the protrusion of the mating end of the first pattern-element portion;
• and
• (c) using the charged-particle-beam lithographic-exposure apparatus, transferring the first and second reticle subregions onto the resist in a manner such that the respective mating ends of the first and second pattern-element portions are stitched together in the pattern on the wafer.

A method for manufacturing a microelectronic device, in which a pattern defined on a segmented reticle is transferred to a surface of a wafer, the pattern including pattern elements split among respective reticle subregions that are individually imaged onto the wafer surface, the method comprising:

• (a) in a first reticle subregion, defining a first pattern-element portion having a line width and a respective mating end including a respective protrusion having an edge extending obliquely to a length dimension of the first pattern-element portion, the protrusion including a respective recess;
• (b) in a second reticle subregion, defining a second pattern-element portion having a line width and a respective mating end that is complementary to the mating end of the first pattern-element portion;
• and
• (c) using the charged-particle-beam lithographic-exposure apparatus, transferring the first and second reticle subregions onto the resist in a manner such that the respective mating ends of the first and second pattern-element portions are stitched together in the pattern on the wafer.

A charged-particle-beam lithographic-exposure method for transferring a pattern to a resist layer on a wafer, the pattern being divided into multiple reticle subregions defining respective portions of the pattern, the subregions being exposed onto the onto the resist layer such that respective images of the reticle subregions are stitched together to form the pattern on the wafer, the method comprising:

• in a first reticle subregion, defining a first pattern-element portion having a line width and a respective first mating end at an edge of the first reticle subregion, the mating end including a protrusion profiled so as to exhibit increased narrowing of line width toward a distal tip of the protrusion, the protrusion having a length that is 1 to 5 times the line width of the first pattern-element portion;
• in a second reticle subregion, defining a second pattern-element portion having a line width and a respective second mating end at an edge of the second reticle subregion adjacent the edge of the first reticle subregion, the second mating end including a recess having a profile that is complementary to the protrusion and having a length that is 1 to 5 times the line width of the second pattern-element portion;
• and
• using a charged particle beam, transferring respective images of the first and second reticle subregions onto the resist such that the images are stitched together edge-to-edge with the respective mating ends of the first and second pattern-element portions stitched together to form a contiguous pattern element.

A charged-particle-beam lithographic-exposure method for transferring a pattern to a resist layer on a wafer, the pattern being divided into multiple reticle subregions defining respective portions of the pattern, the subregions being exposed onto the onto the resist layer such that respective images of the reticle subregions are stitched together to form the pattern on the wafer, the method comprising:

• (a) in a first reticle subregion, defining a first pattern-element portion having a line width and a respective first mating end at an edge of the first reticle subregion, the first mating end being profiled as a recess flanked by respective protrusions each having a respective rounded distal tip and a respective width exhibiting increased narrowing of width toward the respective distal tip;
• (b) in a second reticle subregion, defining a second pattern-element portion having a line width and a respective second mating end at an edge of the second reticle subregion, the second mating end having a profile that is substantially complementary to the profile of the first mating end;
• and
• (c) using a charged particle beam, transferring respective images of the first and second reticle subregions onto the resist such that the images are stitched together edge-to-edge with the respective mating ends of the first and second pattern-element portions stitched together to form a contiguous pattern element.

A charged-particle-beam lithographic-exposure method for transferring a pattern to a resist layer on a wafer, the pattern being divided into multiple reticle subregions defining respective portions of the pattern, the subregions being exposed onto the onto the resist layer such that respective images of the reticle subregions are stitched together to form the pattern on the wafer, the method comprising:

• (a) in a first reticle subregion, defining a first pattern-element portion having a line width and a respective first mating end at an edge of the first reticle subregion, the first mating end being profiled with a respective protrusion extending at an oblique angle relative to a longitudinal direction of the first pattern-element portion and exhibiting increased narrowing of line width toward a distal tip of the protrusion;
• (b) in a second reticle subregion, defining a second pattern-element portion having a line width and a respective second mating end at an edge of the second reticle subregion, the second mating end having a profile that is substantially complementary to the profile of the first mating end;
• and
• (c) using the charged-particle-beam lithographic-exposure apparatus, transferring the first and second reticle subregions onto the resist in a manner such that the respective mating ends of the first and second pattern-element portions are stitched together in the pattern on the wafer.

A charged-particle-beam lithographic-exposure method for transferring a pattern to a resist layer on a wafer, the pattern being divided into multiple reticle subregions defining respective portions of the pattern, the subregions being exposed onto the onto the resist layer such that respective images of the reticle subregions are stitched together to form the pattern on the wafer, the method comprising:

• (a) in a first reticle subregion, defining a first pattern-element portion having a line width and a respective first mating end at an edge of the first reticle subregion, the first mating end being profiled with a respective protrusion having an edge extending obliquely to a length dimension of the first pattern-element portion, the protrusion including a respective recess;
• (b) in a second reticle subregion, defining a second pattern-element portion having a line width and a respective second mating end at an edge of the second reticle subregion, the second mating end having a profile that is substantially complementary to the profile of the first mating end;
• and
• (c) using the charged-particle-beam lithographic-exposure apparatus, transferring the first and second reticle subregions onto the resist in a manner such that the respective mating ends of the first and second pattern-element portions are stitched together in the pattern on the wafer.