Method of extreme ultraviolet mask engineering
AssigneeChartered Semiconductor Manufacturing Ltd.
InventorsSubhash Gupta, Mei Sheng Zhou
Life of this patent
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Abstract
An EUV photolithographic mask device and a method of fabricating the same. The EUV photolithographic mask comprises a multi-layer over an EUV masking substrate and a patterned light absorbing layer formed on the multi-layer. The method comprises the steps of forming a multi-layer on an EUV mask substrate, forming a light absorbing layer on the multi-layer, and etching an opening through the light absorbing layer to the multi-layer. The light absorbing layer includes a metal selected from the group comprising nickel, chromium, cobalt, and alloys thereof, and is preferably nickel.
Claims24
A method of fabricating a photolithographic EUV mask device, comprising the steps of:
- forming a multi-layer on an EUV mask substrate;
- forming a light absorbing layer on said multi-layer;
- said light absorbing layer being comprised of nickel;
- and then
- etching an opening through said light absorbing layer to said multi-layer under the following conditions:
- a temperature of less than about 40° C.:
- an inductive coil power of less than about 350 watts;
- a CO gas flow of from about 50 to 400 sccm;
- a pressure of from about 8 to 12 milliTorr;
- and
- no bias power.
A method of fabricating a photolithographic EUV mask device, comprising the steps of:
- forming a multi-layer on an EUV mask substrate;
- forming a metal layer on said multi-layer;
- said metal layer being comprised of nickel;
- forming a photoresist layer over said metal layer;
- patterning said photoresist layer exposing a portion of said metal layer;
- and then
- etching said exposed portion of said metal layer forming an opening through said metal layer to said multi-layer under the following conditions:
- a temperature of less than about 40° C.;
- an inductive coil power of less than about 350 watts;
- a CO gas flow of from about 50 to 400 sccm;
- a pressure of from about 8 to 12 milliTorr;
- and
- no bias power.
A method of fabricating a photolithographic EUV mask device, comprising the steps of:
- forming a multi-layer on an EUV mask substrate;
- forming a non-silicide light absorbing layer on said multi-layer;
- said non-silicide light absorbing layer being comprised of nickel;
- and the
- etching an opening through said non-silicide light absorbing layer to said multi-layer using a dry etch process under the following conditions:
- a temperature of less than about 40° C.;
- an inductive coil power of less than about 350 watts;
- a CO gas flow of from about 50 to 400 sccm;
- a pressure of from about 8 to 12 milliTorr;
- and
- no bias power.
Dependencies are inferred from the claim text.