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US 6,656,532 B2Granted
Layered hard mask and dielectric materials and methods therefor
AssigneeHoneywell International Inc.
InventorLynn Forester
Life of this patent
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Abstract
A damascene structure includes a hard mask layer that is applied in a liquid phase to a line dielectric layer. Contemplated hard mask layers comprise a Si—N bond and are densified such that the etch resistivity of the hard mask layer is greater than the etch resistivity of the line dielectric layer and the via dielectric layer in the damascene structure. Particularly preferred hard mask layers include polyperhydrosilazane.
Claims20
An electronic device comprising:
- a hard mask layer that is applied in a liquid phase to a line dielectric layer, wherein the hard mask layer comprises a Si—N bond, and wherein the hard mask layer is densified such that the hard mask has an etch resistivity that is greater than both an etch resistivity of the line dielectric layer and an etch resistivity of a via dielectric layer;
- and
- wherein the hard mask layer, the line dielectric layer, the via dielectric layer, and a copper element are configured to form a dual damascene structure.
A method of forming a dual damascene structure, comprising:
- providing a surface and depositing a low dielectric constant material onto the surface to form a first layer;
- applying an etch stop layer in a liquid phase to the first layer, wherein the etch stop layer comprises a material including a Si—N bond;
- and
- densifying the etch stop layer using a process selected from the group consisting of a furnace cure process, a rapid thermal anneal process, a hot plate anneal process, and an electron beam process.
1 more element
Dependencies are inferred from the claim text.